研究目的
To investigate current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors.
研究成果
Bias annealing in air at 300°C effectively reduces interface state density at the Al2O3/AlGaN interface, leading to improved current linearity, higher maximum drain current, lower subthreshold slope, and enhanced operation stability with minimal threshold voltage shift under stress and high temperatures in AlGaN/GaN MOS-HEMTs.
研究不足
The study is limited to Al2O3 as the gate oxide and specific annealing conditions; other materials or processes may yield different results. High-temperature stability was only tested up to 100°C, and the analysis did not cover very shallow interface states above EC - 0.2 eV due to measurement constraints.
1：Experimental Design and Method Selection:
The study involved fabricating and characterizing Al2O3-gate MOS-HEMTs with and without bias annealing to assess improvements in linearity and stability. Theoretical models included Poisson–Schr?dinger calculations for C–V analysis.
2：Sample Selection and Data Sources:
Al0.24Ga0.76N/GaN heterostructures grown on SiC substrates by MOCVD were used, with 2DEG density and mobility specified.
3：24Ga76N/GaN heterostructures grown on SiC substrates by MOCVD were used, with 2DEG density and mobility specified.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an ALD system (SUGA-SAL1500) for Al2O3 deposition, electron beam evaporator for gate electrode formation, and materials such as Ti/Al/Ti/Au for ohmic contacts and Ni/Au for gate electrodes.
4：Experimental Procedures and Operational Workflow:
Fabrication steps included ohmic annealing, Al2O3 deposition via ALD, gate metallization, and bias annealing at 300°C in air. Electrical characterizations (ID-VD, ID-VG, C-V) were performed at room temperature and 100°C.
5：Data Analysis Methods:
Data were analyzed using SRH statistics for interface state evaluation, and C–V curves were fitted with self-consistent Poisson–Schr?dinger calculations to determine interface state densities.
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