研究目的
To develop a reliable and efficient parameter extraction method for GaN HEMT small-signal models to reduce approximation errors and improve accuracy.
研究成果
The proposed parameter extraction method effectively reduces approximation errors, provides reliable small-signal parameters, and scales well with device dimensions. It is efficient and suitable for large-signal and noise modeling applications.
研究不足
The method relies on specific bias conditions and device types; it may not generalize to all GaN HEMT variations or higher frequency ranges beyond 40 GHz. The iterative process requires computational resources and may be time-consuming.
1：Experimental Design and Method Selection:
A scanning and iteration combined optimization algorithm based on direct extraction methods is used to extract extrinsic elements from cold pinch-off and cold unbiased measurements. The algorithm is implemented in a Matlab program for efficiency.
2：Sample Selection and Data Sources:
Two GaN HEMT devices with gate widths of 4 × 75 μm and 4 × 200 μm are used, fabricated on silicon carbide substrate. S-parameters are measured from 0.1 GHz to 40 GHz under various bias conditions.
3：1 GHz to 40 GHz under various bias conditions.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: GaN HEMT devices, network analyzer for S-parameter measurements, Matlab software for algorithm implementation.
4：Experimental Procedures and Operational Workflow:
Extrinsic capacitances and inductances are extracted from cold pinch-off S-parameters using parameter scanning; extrinsic resistances are extracted from cold unbiased S-parameters. An iterative process optimizes these elements to minimize error between simulated and measured S-parameters.
5：Data Analysis Methods:
Error function defined to quantify differences between measured and simulated S-parameters; intrinsic elements are extracted after de-embedding extrinsic elements using analytical methods.
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