研究目的
To develop and validate an in-situ monitoring method for PECVD process equipment condition using various sensors to maintain consistent plasma processing and achieve precise control.
研究成果
The in-situ monitoring method using a combination of OES, OPMS, VI-probe, and SP-OES is effective for detecting process shifts, arcs, part failures, and analyzing cleaning chemistry in PECVD systems, leading to better process control and equipment health monitoring.
研究不足
SP-OES is not suitable for direct analysis of fluorinated species due to high electron binding energy. The study did not follow up on the effects of abnormal plasma discharge on wafers or chamber. The method may require optimization for different plasma systems.
1:Experimental Design and Method Selection:
The study employed a commercial PECVD system with
2:56 MHz RF power for ACL deposition using C3H6 gas. Four in-situ sensors (OES, OPMS, VI-probe, SP-OES) were installed and validated for monitoring plasma and equipment conditions during deposition and cleaning processes. Sample Selection and Data Sources:
Amorphous carbon layers were deposited on 300 mm wafers. Data were acquired from sensor measurements during process steps.
3:List of Experimental Equipment and Materials:
PECVD system with RF power, remote plasma system (
4:45 GHz), sensors (OES, OPMS, VI-probe, SP-OES), gases (C3H6, He, NF3, Ar, N2), and wafers. Experimental Procedures and Operational Workflow:
Sensors were installed on the chamber sidewall and foreline. Deposition and cleaning processes were performed at specified temperatures and pressures. Data were collected simultaneously using Y-type optical fibers for OES and OPMS.
5:Data Analysis Methods:
Optical emission spectra, voltage, current, phase, and power data were analyzed to detect arcs, part failures, and process shifts.
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