研究目的
To design a low-loss Y-branch power splitter using GaN on Sapphire for telecommunication wavelengths and investigate the optical properties of the GaN sample.
研究成果
The designed GaN-based Y-branch power splitter shows minimal loss and good optical field distribution at 1.55 μm wavelength, as verified by simulations. The optical properties of the GaN sample were accurately measured, supporting the feasibility of such devices for telecommunication applications.
研究不足
The study is based on simulations and optical characterization; actual fabrication and testing of the device are not performed, which may introduce discrepancies. The sample used has specific properties that may not generalize to other GaN structures.
1：Experimental Design and Method Selection:
The design utilized a symmetric Y-branch with a multimode section and S-bend waveguides, optimized using the Beam Propagation Method (BPM) via OptiBPM software. Optical characterization was performed using a guided wave technique with prism coupling.
2：Sample Selection and Data Sources:
A GaN sample grown on Sapphire with specific layer structure (GaN active layer, buffer layers) was used, differing from previous works.
3：List of Experimental Equipment and Materials:
Equipment included a Metricon M2010 setup with a rutile TiO2 prism for refractive index measurements, and OptiBPM software for simulations. Materials involved GaN on Sapphire substrates.
4：Experimental Procedures and Operational Workflow:
For optical characterization, a laser beam was directed at the prism to measure reflected intensity versus angle to determine refractive indices. For the Y-branch design, simulations were conducted to optimize parameters like waveguide dimensions and S-bend ratios.
5：Data Analysis Methods:
Refractive indices were calculated from guided mode spectra with an accuracy of 10^-3. Simulation results were analyzed for optical field distribution and power splitting efficiency.
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