研究目的
To develop a method for recovering sulphur poisoned Pt-PtOx core-shell nanowire sensors using UV irradiation to enhance sensor life.
研究成果
UV irradiation at 248 nm for 5 minutes effectively recovers sulphur poisoned Pt-PtOx sensors, restoring sensing response by approximately 50%. This method offers a fast and simple alternative to thermal treatments, potentially extending sensor lifetime.
研究不足
The study is limited to Pt-PtOx sensors and H2S poisoning; recovery may vary with other gases or materials. UV irradiation requires specific wavelengths and power, which might not be feasible in all applications. The method's effectiveness over long-term use is not fully explored.
1：Experimental Design and Method Selection:
The study involves fabricating Pt-PtOx core-shell nanowire sensors using plasma oxidation, optimizing oxidation conditions, and testing for H2S sensing. UV irradiation at 248 nm and 365 nm is used for recovery of poisoned sensors.
2：Sample Selection and Data Sources:
Silicon p-type substrates with thermally grown SiO2 are used. Pt films and nanowires are fabricated via sputter deposition and electron beam lithography.
3：List of Experimental Equipment and Materials:
Equipment includes electron beam lithography system, reactive ion etching system, XPS tool (Axis Ultra with Al Kα source), TEM, Keithley 2450 source meter, mass flow controllers, UV light sources (248 nm and 365 nm wavelengths). Materials include SU-8 resist, PMMA/EL9 resist, platinum, silicon substrates.
4：Experimental Procedures and Operational Workflow:
Fabrication involves lithography, sputter deposition, lift-off, and plasma oxidation. Sensing tests are conducted at controlled temperatures with H2S exposure, followed by UV irradiation for recovery. XPS and TEM are used for characterization.
5：Data Analysis Methods:
XPS data is deconvoluted to identify oxidation states and sulphur bonding. Sensing response is analyzed based on current changes, with LOD calculated from linear fits.
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