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First principles study of electronic structures of Cd0.9375Co0.0625X (X?=?S, Se, Te) for magnetic, optical and thermoelectric device applications

DOI:10.1016/j.mseb.2018.12.006 期刊:Materials Science and Engineering: B 出版年份:2018 更新时间:2025-09-23 15:23:52
摘要: The present article investigates the structural and electronic properties of Co doped (xCo = 6.25%) CdS/Se/Te diluted magnetic semiconductors to understand the optical and thermoelectric characteristics. The electronic properties, computed by applying generalized gradient approximation (GGA) and then modified Becke Johnson (mBJ) functional, are contrasted to identify the appropriate electronic parameters. The stable ferromagnetic states have been justified to arise due to the p-d hybridization that has been found responsible in inducing magnetic moments at the interstitial and at the non-magnetic sites. The computed direct band gap and the exchange constants (N0α and N0β) have suggested, respectively, the potential optical and spintronic device applications. The studied compounds operate within visible-ultraviolet energy range. The thermoelectric response improves with temperature, while deteriorated due to Co doping. The studied compounds exhibiting various significant physical properties evidence the potential consumption in various technologically important spintronic, optoelectronic and thermoelectric devices.
作者: M. Hassan,N. Akhtar,Q. Mahmood,A. Laref
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To investigate the structural, electronic, optical, and thermoelectric properties of Co-doped CdS, CdSe, and CdTe diluted magnetic semiconductors for potential applications in spintronic, optoelectronic, and thermoelectric devices.

The Co-doped CdS, CdSe, and CdTe compounds exhibit ferromagnetic semiconducting nature due to exchange splitting from Co 3d-states hybridization with host lattice states. They are suitable for optical devices in the visible-ultraviolet range and show potential for spintronic and thermoelectric applications, though thermoelectric performance is reduced by Co doping and requires further optimization.

The study is theoretical and computational, relying on DFT approximations which may not fully capture experimental realities. Co doping deteriorates thermoelectric performance, indicating a need for optimization in growth procedures and defect engineering to improve carrier concentrations.

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