研究目的
To design nBn type HgCdTe detectors using delta-doped layers and compositional grading to remove valence band offset and suppress dark currents, especially for detectors on alternative substrates with limited carrier lifetimes.
研究成果
The use of delta-doped layers and compositional grading in HgCdTe nBn detectors effectively removes valence band offset and suppresses dark currents (SRH and TAT), leading to significantly higher operating temperatures (up to 60 degrees increase) compared to conventional pn detectors, especially beneficial for alternative substrate applications with limited carrier lifetimes.
研究不足
The designs do not account for the effects of extended defects, which could shortcut the barrier and degrade performance. The simulations assume specific SRH lifetimes and defect parameters, and real-world fabrication complexities are not considered.
1：Experimental Design and Method Selection:
Numerical simulations using Sentaurus TCAD software to solve Poisson and drift-diffusion equations, including SRH, TAT, Auger, and radiative recombination mechanisms.
2：Sample Selection and Data Sources:
Simulated HgCdTe detector structures for SWIR, MWIR, and LWIR bands with specified parameters (e.g., Cd mole ratio, layer thicknesses, doping concentrations).
3：List of Experimental Equipment and Materials:
Sentaurus TCAD software (version K-
4：06), simulated HgCdTe materials with delta-doped layers. Experimental Procedures and Operational Workflow:
20 Design of nBn and pn detector structures, calculation of current-voltage characteristics under dark and illuminated conditions at various temperatures, analysis of band diagrams and dark current components.
5：Data Analysis Methods:
Comparison of I-V curves, evaluation of dark current suppression, and determination of operating temperature improvements.
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