研究目的
To enhance charge separation and transfer in BiVO4 by engineering metallic V13O16-decorated BiVO4 for improved photoelectrochemical water oxidation performance.
研究成果
The metallic V13O16-decorated BiVO4 hybrid exhibits enhanced photocurrent due to improved conductivity and ohmic contact, with further improvement from Co-Pi passivation reducing recombination. The study provides a new approach for semiconductor photocatalysis by coupling with compatible metallic oxides and highlights the role of surface passivation in enhancing performance.
研究不足
The charge transfer is limited by the barrier at the Co-Pi/electrolyte interface, which reduces overall performance. Further optimization of electrolyte composition or interface modification may be needed to improve charge transfer rates.
1：Experimental Design and Method Selection:
The synthesis involves a simplified electrochemical procedure to create BiVO4-V13O16 hybrids with controlled mass percentages. Methods include electrodeposition, annealing, etching, and characterization techniques such as XRD, XPS, SEM, TEM, HRTEM, SAED, SPV, TPC, EIS, PL, and DFT calculations.
2：Sample Selection and Data Sources:
Samples are BiVO4-V13O16 hybrids with different etching times (10, 30, 60 min) to vary V13O16 content. Data sources include experimental measurements and computational simulations.
3：List of Experimental Equipment and Materials:
Equipment includes FTO substrate, muffle furnace, Xe arc lamp, three-electrode setup (platinum counter electrode, saturated calomel reference electrode), phosphate buffer electrolyte, sodium hydroxide, vanadium source VO(acac)2, and various analytical instruments (XRD, XPS, SEM, TEM, HRTEM, SAED, SPV, TPC, EIS, PL). Materials include BiOI, BiVO4, V13O16, Co-Pi.
4：Experimental Procedures and Operational Workflow:
Steps involve electrodeposition of BiOI on FTO, coating with VO(acac)2, annealing at 450°C, quenching in air, etching with NaOH to remove V2O5 and control V13O16 percentage, characterization of structure and morphology, photoelectrochemical testing in phosphate buffer under illumination, and application of Co-Pi coating via photoelectrochemical method.
5：Data Analysis Methods:
Data analyzed using quantitative X-ray analysis, DFT calculations with CRYSTAL17 code and PBE0 functional, EIS for charge-transfer resistance, SPV and TPC for charge dynamics, and statistical analysis of photocurrent densities.
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FTO substrate
Used as a conductive substrate for electrode deposition.
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Xe arc lamp
AM 1.5 G
Provides simulated solar illumination for photoelectrochemical testing.
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Platinum electrode
Serves as the counter electrode in the three-electrode setup.
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Saturated calomel electrode
Used as the reference electrode in the three-electrode setup.
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Phosphate buffer
0.5 M
Electrolyte for photoelectrochemical measurements.
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Sodium hydroxide
Used for etching to remove V2O5 and control V13O16 content.
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VO(acac)2
Vanadium source for synthesis.
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Muffle furnace
Used for annealing samples at 450°C.
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