研究目的
To study the effect of Nd doping on the structural and opto-electronic properties of CdO thin films fabricated by a perfume atomizer spray method.
研究成果
Nd-doped CdO thin films exhibit improved structural, optical, and electrical properties with increasing Nd concentration, making them suitable for optoelectronic applications such as photodiodes. The films show reduced band gap, increased carrier concentration, and enhanced photoresponsivity in heterojunction devices.
研究不足
The study is limited to specific Nd doping concentrations (0-5%) and deposition parameters; scalability and long-term stability of the films for practical applications are not addressed; the use of a perfume atomizer may introduce variability in film uniformity.
1:Experimental Design and Method Selection:
A spray pyrolysis method using a perfume atomizer was employed to deposit undoped and Nd-doped CdO thin films on glass substrates. The method was chosen for its simplicity and ability to modify film properties by varying parameters.
2:Sample Selection and Data Sources:
Thin films were prepared with different Nd doping concentrations (0, 1, 3, and 5 wt%) using cadmium acetate and neodymium dopant in deionized water. Glass substrates were pre-cleaned.
3:List of Experimental Equipment and Materials:
Perfume atomizer, magnetic stirrer, temperature controller, thermocouple, X-ray diffractometer (PANalytical X’Pert PRO), micro-Raman spectrometer (LABRAM-HR), FTIR spectrometer (Bruker system), SEM (Hitachi S-3000H), UV-Vis-NIR spectrometer (Perkin Elmer Lambda 35), PL spectrometer (Horiba Jobin Yvon), Hall effect measurement setup, semiconductor parameter analyzer (Keithley 4200), halogen lamp for photoexcitation.
4:Experimental Procedures and Operational Workflow:
Precursor solution preparation with stirring, substrate cleaning, deposition at controlled parameters (substrate temperature 350°C, spray time 10 s, interval 20 s, distance 30 cm, angle 45°), cooling to room temperature. Characterization using XRD, Raman, FTIR, SEM, EDX, UV-Vis-NIR, PL, Hall effect, and photoconductivity measurements.
5:Data Analysis Methods:
XRD data analyzed for crystallite size using Scherrer's formula, dislocation density, microstrain; optical data for band gap using Tauc plot; electrical data for resistivity, carrier concentration, mobility; photoconductivity data for ideality factor and responsivity.
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X-ray diffractometer
X’Pert PRO
PANalytical
Analyze XRD patterns of thin films
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FTIR spectrometer
Bruker system
Bruker
Record FTIR spectra
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SEM
S-3000H
Hitachi
Characterize surface morphology
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UV-Vis-NIR spectrometer
Lambda 35
Perkin Elmer
Determine optical transitions
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semiconductor parameter analyzer
4200
Keithley
Record photocurrent
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micro-Raman spectrometer
LABRAM-HR
Record Raman spectra
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PL spectrometer
Horiba Jobin Yvon
Measure emission properties
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halogen lamp
Photoexcitation source
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