研究目的
To modulate the electrical performances of In2O3 nanofiber channel thin film transistors via Sr doping to address issues like large leakage current, low on/off current ratio, and large negative threshold voltage.
研究成果
Sr doping effectively modulates the electrical properties of In2O3 NFs, enabling enhancement-mode operation with high performance. The optimal doping concentration is 3.6 mol%, yielding high mobility, low off-current, and superior on/off ratio. Integration with high-κ dielectrics reduces operation voltage and improves mobility. The devices show good stability and are suitable for inverter applications, advancing low-cost, energy-efficient electronics.
研究不足
The study is limited to Sr doping in In2O3 NFs; other dopants or materials were not extensively compared. The electrospinning process may have scalability issues for industrial applications, and the device performance could be affected by environmental factors like humidity and temperature.
1：Experimental Design and Method Selection:
A one-step electrospinning process was used to fabricate Sr-doped In2O3 nanofibers, with UV-assisted pretreatment and thermal annealing to enhance NF adhesion and crystallinity. FETs were fabricated in a back-gated configuration using Al source/drain contacts, SiO2 or Al2O3 gate dielectrics, and heavily doped p-type Si substrates.
2：Sample Selection and Data Sources:
In2O3 NFs with various Sr doping concentrations (0 to 18 mol%) were prepared. Electrical properties were characterized using a semiconductor parameter analyzer.
3：List of Experimental Equipment and Materials:
Materials included indium chloride tetrahydrate, PVP, DMF, strontium nitrate, aluminum nitrate, PTFE syringe filters, Al electrodes, SiO2/Si wafers. Equipment included electrospinning setup, SEM (NovaNano SEM450), TEM (JEOL JEM 2100F), XRD (Rigaku D/max-rB), UV-vis spectrophotometer (PERSEE T9), semiconductor parameter analyzer (Keithley 2634B).
4：Experimental Procedures and Operational Workflow:
Precursor solutions were prepared, electrospun onto substrates, treated with UV irradiation, annealed at 600°C, and electrodes were evaporated. For Al2O3 dielectrics, spin-coating and annealing at 700°C were performed. Electrical measurements were conducted in ambient conditions.
5：Data Analysis Methods:
Field-effect mobility and threshold voltage were calculated using standard formulas for thin film transistors. Statistical analysis was performed on multiple devices.
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