1：Experimental Design and Method Selection:

The study involved growing InxGa1-xAs epitaxial layers on InP(100) substrates with different In contents (x = 0.16, 0.28, 0.53, 0.72, 0.82) using low-pressure metal organic chemical vapor deposition (MOCVD) to investigate the effects of lattice mismatch on surface morphology and dislocation density. Characterization techniques included atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Hall effect measurements.

2：16, 28, 53, 72, 82) using low-pressure metal organic chemical vapor deposition (MOCVD) to investigate the effects of lattice mismatch on surface morphology and dislocation density. Characterization techniques included atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and Hall effect measurements. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: Samples were prepared with specific In contents as listed in Table 1, using InP(100) substrates. Data were collected from these samples through various analytical instruments.

3：List of Experimental Equipment and Materials:

Equipment used: MOCVD system (AIXTRON 200/4), AFM (Multimode 8), SEM (EVO-18, Zeiss), XRD (D8 Bruker high-resolution X-ray diffractometer), TEM (JEM-2100F, JEOL), ion polishing system (Leica RES101), Raman spectroscope (UV-Horiba), Hall tester (Lake-7704A). Materials: Trimethylindium (TMIn), trimethylgallium (TMGa), arsine (AsH3) in H2, palladium-diffused hydrogen carrier gas, InP substrates.

4：Experimental Procedures and Operational Workflow:

Epitaxial layers were grown at 530°C with a reactor pressure of 2 × 10^3 Pa and total flow rate of 6650 ml/min. Samples were characterized for morphology (AFM, SEM), crystalline quality (XRD rocking curves), dislocation density (TEM), residual stress (Raman spectroscopy), and electrical properties (Hall effect). Cross-sectional TEM samples were prepared by thinning and ion-milling.

5：Data Analysis Methods:

Dislocation density was calculated from XRD rocking curve full width at half maximum (FWHM) using a specific formula. Residual stress was derived from Raman shift measurements using provided equations. Surface roughness was analyzed from AFM data. Statistical analysis of carrier concentration and other parameters was performed based on experimental measurements.