1：Experimental Design and Method Selection:

Electrical characterization of MoS2 FETs was performed inside a scanning electron microscope (SEM) chamber under high vacuum to study the effects of electron beam irradiation (EBI) at low energies (up to 10 keV). The methodology included in-situ measurements before and after irradiation, using a semiconductor parameter analyzer for electrical measurements and SEM for imaging and irradiation.

2：Sample Selection and Data Sources:

CVD-synthesized few-layer MoS2 flakes on SiO2(300nm)/p-Si substrates were used. Samples were characterized using micro-Raman spectroscopy to identify the number of layers.

3：List of Experimental Equipment and Materials:

Equipment included a Zeiss LEO 1430 SEM, tungsten tips on a nanoprobes system, Keithley 4200-SCS semiconductor parameter analyzer, and a micro-Raman spectrometer with a 532 nm laser source. Materials included MoS2 flakes, Ti/Au electrodes, and SiO2/p-Si substrates.

4：Experimental Procedures and Operational Workflow:

MoS2 flakes were synthesized via CVD. Electrical contacts were deposited using electron-beam lithography and lift-off. Electrical measurements (output and transfer characteristics) were conducted in the SEM chamber before and after EBI at 10 keV and

5：2 nA beam current. Field emission measurements were performed by adjusting the cathode-anode distance with tungsten tips. Data Analysis Methods:

Data were analyzed using Fowler-Nordheim theory for field emission, linear fits for mobility calculation, and statistical methods for stability analysis. Parameters such as threshold voltage, carrier mobility, turn-on field, and field enhancement factor were extracted.