摘要： Although all-inorganic CsPbX3 (X=Cl, Br, I) nanocrystals (NCs) have been considered as a promising material for photoelectronic devices, their applications are still limited because of their poor stability and the lack of in-depth understanding. Here, we demonstrate a post-treatment method for the preparation of ultrathin CsPbX3 nanowires (NWs) by treating CsPbBr3 nanocubes with thiourea solution. A systematic study showed a consecutively interfacial transformation process, in which CsPbBr3 nanocubes were first converted to Cs4PbBr6 NCs in the presence of thiourea, followed by a further transformation to CsPbBr3 NCs through an interfacial CsX-stripping process. To reduce the surface energy, an oriented attachment process has been realized and CsPbBr3 NCs aggregated to form ultrathin NWs. The ultrathin CsPbBr3 NWs exhibited high photoluminescence quantum yield (PLQY, up to 60%) and high resistance to water treatment, which can be attributed to the surface passivation by thiourea. In addition to thiourea, cysteine and thioacetamide that contain thiol group can also be used to trigger this transformation. This work can not only offer a facile method for the synthesis of efficient and stable ultrathin CsPbBr3 NWs, but also help to reveal the in-depth mechanisms which may be very useful in the field of metal halide perovskite NCs.