研究目的
To develop a cost-effective process for producing high-performance flexible transparent nanomesh electrodes with superior optoelectronic properties, flexibility, and electromagnetic interference shielding effectiveness compared to existing alternatives like ITO and AgNW electrodes.
研究成果
The developed FTNE films exhibit superior optoelectronic properties, flexibility, and EMI shielding compared to ITO and AgNW electrodes, making them suitable for various flexible optoelectronic applications. The optimization of geometric parameters allows for tunable performance, and the cost-effective fabrication process enhances practicality.
研究不足
The process may have limitations in scalability for very large areas due to the complexity of phase-shifting edge lithography. The use of Ag paste could pose cost or environmental concerns, and the flexibility might be affected by extreme bending conditions beyond tested parameters.
1:Experimental Design and Method Selection:
The study used phase-shifting edge lithography to fabricate nickel molds for creating nanomesh patterns, followed by UV-imprinting and Ag-paste filling to produce flexible transparent nanomesh electrode (FTNE) films. The design rationale was to optimize linewidth, pitch, and height for enhanced performance.
2:Sample Selection and Data Sources:
Six FTNE films with varying linewidths, pitches, and heights were prepared (FTNE-1 to FTNE-6) on PET substrates, as specified in Table 1 of the paper.
3:List of Experimental Equipment and Materials:
Equipment included a UV source, photoresist (AZ GXR-601-14cP), developer (AZ 300MIF), nickel for electroforming, UV-curable polyurethane acrylate (MNR-03), Ag paste (TEC-PA-010), PET film, spectrophotometer (CM-3600d), four-point probe system, FE-SEM (S-4800), insulation tester (Fluke 1507), and network analyzer (Agilent Technologies E5071B). Materials included polydimethylsiloxane (PDMS) for phase masks.
4:Experimental Procedures and Operational Workflow:
The process involved fabricating a nickel mold via phase-shifting edge lithography, creating a nanotrench pattern with UV-imprinting, filling with Ag paste, and curing. Optical transmittance, sheet resistance, flexibility (bending tests up to 50,000 cycles), and EMI shielding effectiveness were measured.
5:Data Analysis Methods:
Transmittance was measured using a spectrophotometer, sheet resistance with a four-point probe, flexibility by resistance change after bending, and EMI SE with a network analyzer. Data were averaged from multiple samples, and theoretical models were compared for transmittance and figure of merit.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容-
FE-SEM
S-4800
Hitachi
Observing surface morphologies of photoresist and nanomesh electrode patterns.
-
insulation tester
Fluke 1507
Fluke
Measuring resistance of the FTNE films at specific points.
-
network analyzer
E5071B
Agilent Technologies
Measuring electromagnetic interference shielding effectiveness over a frequency range of 100 MHz to 2.5 GHz.
-
spectrophotometer
CM-3600d
Konica Minolta
Measuring optical transmittance of the FTNE films in the spectral range of 380–780 nm.
-
photoresist
AZ GXR-601-14cP
AZ Electronic Materials
Used in the phase-shifting edge lithography process for creating patterns.
-
developer
AZ 300MIF
AZ Electronic Materials
Developing the photoresist pattern after UV exposure.
-
UV-curable resin
MNR-03
Changsung Sheet
Used for creating nanotrench patterns via UV-imprinting.
-
Ag paste
TEC-PA-010
InkTec
Filling the nanotrench patterns to form conductive nanomesh electrodes.
-
登录查看剩余6件设备及参数对照表
查看全部