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-doped two-dimensional semiconductor quantum wells

DOI:10.1103/PhysRevB.98.235203 期刊:Physical Review B 出版年份:2018 更新时间:2025-09-23 15:23:52
摘要: We present a theoretical study of photoabsorption in n-doped two-dimensional (2D) and quasi-2D semiconductors that takes into account the interaction of the photocreated exciton with Fermi-sea (FS) electrons through (i) Pauli blocking, (ii) Coulomb screening, and (iii) excitation of FS electron-hole pairs—that we here restrict to one. The system we tackle is thus made of one exciton plus zero or one FS electron-hole pair. At low doping, the system ground state is predominantly made of a 'trion-hole'—a trion (two opposite-spin electrons plus a valence hole) weakly bound to a FS hole—with a small exciton component. As the trion is poorly coupled to photon, the intensity of the lowest absorption peak is weak; it increases with doping, thanks to the growing exciton component, due to a larger coupling between two-particle and four-particle states. Under a further doping increase, the trion-hole complex is less bound because of Pauli blocking by FS electrons, and its energy increases. The lower peak then becomes predominantly due to an exciton dressed by FS electron-hole pairs, that is, an exciton-polaron. As a result, the absorption spectra of n-doped semiconductor quantum wells show two prominent peaks, the nature of the lowest peak turning from trion-hole to exciton-polaron under a doping increase. Our work also nails down the physical mechanism behind the increase with doping of the energy separation between the trion-hole peak and the exciton-polaron peak, even before the anticrossing, as experimentally observed.
作者: Yia-Chung Chang,Shiue-Yuan Shiau,Monique Combescot
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Investigating the crossover from trion-hole complex to exciton-polaron in n-doped two-dimensional semiconductor quantum wells under increasing doping concentration.

The research demonstrates a crossover from trion-hole complex to exciton-polaron in n-doped 2D semiconductors with increasing doping, explaining the counterintuitive increase in energy separation between absorption peaks. The findings provide a physical mechanism for experimental observations and highlight the roles of Pauli blocking and Coulomb interactions. Future work could include finite hole mass, dynamic screening, and multiple pair excitations.

The study assumes an infinite valence hole mass, which simplifies calculations but may not fully capture real material behaviors. It restricts to single FS electron-hole pair excitations, neglecting higher-order pairs which become significant at high doping. Dynamic screening and band structure effects (e.g., in TMDs) are not considered. The model is specific to 2D and quasi-2D systems and may not apply to bulk semiconductors.

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