研究目的
To propose a new fabrication routine to control the film morphology of CsPbBr3 and investigate its application in memristors with multilevel resistive switching behavior.
研究成果
The study successfully developed a method to control CsPbBr3 film morphology using BA post-treatment, achieving large grains and multilevel resistive switching in memristors. The devices exhibit high performance with Ron/Roff ratio ≈10^5, low operating voltage ≈±1V, and good data retention ≥10^4 s, indicating potential for electronic applications. Future work could focus on optimizing the process and exploring other halide perovskites.
研究不足
The film morphology control is limited to BA concentrations up to 5%; higher concentrations cause decomposition. The mechanism of morphological change is conjectured and not fully proven. Device scalability and long-term stability beyond 10^4 s are not extensively tested.
1：Experimental Design and Method Selection:
A thermal spray coating process was used to prepare CsPbBr3 thin films, with butyric acid (BA) as a surfactant in post-treatment to control morphology. The method was chosen to overcome the low solubility of cesium salt precursors.
2：Sample Selection and Data Sources:
FTO glass substrates were used. Precursor solutions of CsBr and PbBr2 in DMF were prepared and sprayed. Post-treatment involved spin-coating BA in methanol solutions.
3：List of Experimental Equipment and Materials:
Chemicals included PbBr2, CsBr, DMF, BA, methanol. Equipment included UV/O3 cleaner, spray coater, spin coater, furnace for annealing, sputtering system for Au electrode deposition, Fourier infrared spectrometer, FE-SEM (Quanta 250FEG), EDX, XRD (Bruker D8 diffractometer), Keithley 4200 SourceMeter.
4：Experimental Procedures and Operational Workflow:
Clean FTO substrate with UV/O3; prepare precursor solution; spray coat at 100°C; spin-coat BA solution; anneal at 250°C for 2h; deposit Au electrode by sputtering; characterize with IR, SEM, EDX, XRD; measure resistive switching with Keithley
5：Data Analysis Methods:
42 IR spectroscopy for BA detection, SEM for morphology, EDX for elemental analysis, XRD for crystal structure, I-V measurements for resistive switching behavior, fitting to Ohmic and SCLC conduction models.
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