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The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon

DOI:10.1016/j.mssp.2018.12.004 期刊:Materials Science in Semiconductor Processing 出版年份:2019 更新时间:2025-09-23 15:23:52
摘要: Due to the existence of an acid etch resistant thin amorphous silicon layer over the smooth grooves of the diamond wire sawing polycrystalline silicon wafer surface, the anti-re?ection e?ect is usually not ideal using the mature acidic texturization. The amorphous silicon layer will be produced on the machined surface by material ductile removal. Therefore, during the process of cutting photovoltaic polycrystalline silicon wafers, the material removed in the brittle way is expected and the surface topography of the wafers formed with the brittle fracture is better for the texture fabricating. In this paper, a mathematical model considering the in?uences of process parameters and wire saw parameters was developed based on indentation fracture mechanics. The variations of cutting groove pro?le formed by di?erent material removal modes were also included. The e?ect of abrasives distributed on the wire saw on material removal and surface formation of polysilicon was analyzed. The results showed that most of abrasives removed material with ductile removal mode, however, the volume of the material removed by abrasive in ductile mode is less than 10% of the total removal volume. Brittle fracture removal mode was still the major way of material removal in diamond wire sawing. With the same ratio of the feed rate and wire speed, the faster feed rate and wire speed will not only improve the cutting e?ciency, but also is easier to obtain a brittle fracture surface. There is a critical angle θc for the distribution of abrasives on the wire saw surface. Only when the position angle of the abrasive removing material in brittle mode is less than θc, the brittle fracture can be formed on the wafers surface.
作者: Xinying Li,Yufei Gao,Peiqi Ge,Lei Zhang,Wenbo Bi
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To investigate the effect of cut depth and distribution of abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon, aiming to optimize the process for better surface topography suitable for acidic texturization.

The study concludes that brittle fracture is the primary material removal mode in diamond wire sawing, with ductile removal contributing less than 10% of the total volume. Increasing feed rate or decreasing wire speed reduces the number of active abrasives, favoring brittle fracture surfaces. A critical position angle θc exists for abrasives to affect surface morphology, varying with wire parameters but not process parameters. Optimizing feed rate and wire speed ratio can enhance cutting efficiency and surface quality for acidic texturization.

The model assumes no elastic deformation of the wire saw or workpiece, and does not account for vibrations or environmental conditions. It uses a simplified abrasive shape (hemispherical top with conical base) and fixed critical cutting depth (dc=0.5 μm), which may not capture all real-world variabilities. The simulation is based on ideal conditions without experimental validation from physical tests.

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