研究目的
To present and simulate a new deep p-ring trench termination design that reduces silicon area and eliminates the need for an additional mask in high voltage power devices, while improving reliability by reducing electric field peaks.
研究成果
The deep p-ring trench termination design reduces termination area by 30% for 1.2kV devices compared to conventional methods, eliminates the need for an extra mask, and improves reliability by reducing electric field peaks and hot carrier injection. It is cost-effective and fabrication-friendly, making it a promising solution for trench MOSFETs and IGBTs, with no additional technical difficulties or new materials required.
研究不足
The study is based on simulations and lacks experimental validation; it may not account for all real-world fabrication challenges or variations. The optimization is specific to 1.2kV devices, and applicability to other voltage ratings is not explored. Potential limitations in scalability or integration with existing fabrication processes are not addressed.
1：Experimental Design and Method Selection:
The study involves extensive simulations using Synopsys Sentaurus TCAD to model and optimize the deep p-ring trench termination design, comparing it with conventional p+ ring and deep dielectric terminations. The design rationale is based on forming p-rings at the bottom of trenches through implantation to achieve charge compensation and reduce electric field peaks.
2：Sample Selection and Data Sources:
Simulations are performed for a 1.2kV rated semiconductor device, with structures defined based on process simulations for active and termination areas. Data is derived from TCAD simulations, not physical samples.
3：2kV rated semiconductor device, with structures defined based on process simulations for active and termination areas. Data is derived from TCAD simulations, not physical samples.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Synopsys Sentaurus TCAD software is used for process and device simulations. No physical equipment or materials are specified, as the study is simulation-based.
4：Experimental Procedures and Operational Workflow:
Process simulations define steps such as trench etching, boron implantation, and diffusion to form p-rings. Device simulations optimize termination layout, including spacing between rings, and assess electric field distribution, breakdown voltage, and electrostatic potential.
5：Data Analysis Methods:
Analysis includes comparing electric field peaks, breakdown voltage curves, and electrostatic potential distributions between different termination designs using simulation outputs.
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