1：Experimental Design and Method Selection:

Vanadium oxide thin films were deposited using an unbalanced magnetron sputtering system with a vanadium metal target and O2 reaction gas, followed by thermal annealing at various temperatures to study their properties.

2：Sample Selection and Data Sources:

Eagle glass substrates (25 × 25 × 1 mm) were used, cleaned ultrasonically in methanol, acetone, and deionized water, and dried with nitrogen gas.

3：List of Experimental Equipment and Materials:

Unbalanced magnetron sputtering system, vanadium metal target (3 inches, purity 99.9%, LTS Inc.), Eagle glass substrates, Ar and O2 gases, furnace for annealing in N2 ambient, FESEM (XL-40aFEG, 10 kV) for thickness measurement, AFM (NITECH, SPM 400, contact mode with Si-DF40 tip) for surface morphology, XRD (D8 Advance, Bruker Corp., Cu Kα radiation, λ=1.5418 ?) for crystalline structure, UV-VIS-NIR spectrophotometer (UV-3600, Shimadzu) with homemade sample heating stage for transmittance and thermochromic measurements.

4：9%, LTS Inc.), Eagle glass substrates, Ar and O2 gases, furnace for annealing in N2 ambient, FESEM (XL-40aFEG, 10 kV) for thickness measurement, AFM (NITECH, SPM 400, contact mode with Si-DF40 tip) for surface morphology, XRD (D8 Advance, Bruker Corp., Cu Kα radiation, λ=5418 ?) for crystalline structure, UV-VIS-NIR spectrophotometer (UV-3600, Shimadzu) with homemade sample heating stage for transmittance and thermochromic measurements. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Substrates were cleaned and placed 60 mm from the target. Base pressure was 1.1 mPa, working pressure 0.4 Pa with Ar/O2 gas mixture (100/20 sccm), target power density 5 W/cm2 at room temperature. Films were deposited to ~120 nm thickness, then annealed in N2 ambient for 2 hours at temperatures from 300°C to 500°C. Properties were measured post-annealing.

5：1 mPa, working pressure 4 Pa with Ar/O2 gas mixture (100/20 sccm), target power density 5 W/cm2 at room temperature. Films were deposited to ~120 nm thickness, then annealed in N2 ambient for 2 hours at temperatures from 300°C to 500°C. Properties were measured post-annealing. Data Analysis Methods:

5. Data Analysis Methods: Structural analysis via XRD patterns, surface morphology via AFM and FESEM images, optical properties via transmittance spectra, electrical properties via sheet resistance, resistivity, carrier concentration, and mobility measurements.