研究目的
To develop and test a new copper-based paste (NPCuXX) for front electrodes in silicon solar cells to replace silver, reducing material costs while maintaining performance.
研究成果
The NPCuXX paste, based on a copper composite with a nickel barrier layer, successfully reduces silver usage by up to 50 wt.%, achieving fill factors of 77.92% for Al-BSF and 77.69% for PERC cells, comparable to commercial Ag pastes. The CuXX component effectively blocks copper diffusion into the p-n junction. Further optimization in full-scale production facilities is recommended to enhance performance and reduce costs.
研究不足
The study was conducted on a semi-industrial scale; full-scale production optimization is needed. The paste composition, especially glass frit, is not fully optimized, leading to slightly higher series resistance and lower Voc compared to commercial Ag pastes. Industrial scalability and long-term stability were not extensively tested.
1：Experimental Design and Method Selection:
The study involved designing a copper composite (CuXX) through chemical processing and incorporating it into a paste for screen printing on solar cells. High-temperature metallization and current-voltage characterization were used.
2：Sample Selection and Data Sources:
p-type mono Cz-Si solar cells with Al-BSF and PERC structures were used, provided by ECN part of TNO. A total of 110 cells were prepared, including references and test cells with NPCuXX pastes.
3：List of Experimental Equipment and Materials:
Equipment included SEM (Supra 35, Zeiss), STEM (Tecnai G2 F20, FEI), solar radiation simulator (Sinton FCT-450), mechanical mixer, laboratory scale, and IR furnace. Materials included copper powder (CNPC-FB00), nickel salts, surfactants, deionized water, carbonyl acetate, Texanol thinner, glass frits, and organic carriers.
4：Experimental Procedures and Operational Workflow:
CuXX component was prepared via electroless deposition, dried, sieved, and mixed into pastes. Pastes were applied by screen printing, dried, and co-fired in an IR furnace at temperatures up to 940°C. I-V measurements were conducted post-metallization.
5：Data Analysis Methods:
I-V parameters (Isc, Voc, Im, Vm, Pm, FF, Eff, Rs, Rsh) were measured and analyzed. SEM and STEM were used for morphological and elemental analysis. A two-diode model was applied for electrical parameter fitting.
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