研究目的
To develop an optimized etching process for single-crystal diamond microdisks to achieve high optical quality factors for optomechanics applications.
研究成果
The optimized etching process achieves a fourfold improvement in optical quality factor to Q ~335,000, enabling sideband-resolved optomechanical experiments. Surface roughness is identified as the primary limitation, suggesting potential for further enhancements with improved etch techniques.
研究不足
Optical quality factor is limited by surface roughness from etching imperfections; further improvements require smoother etches or surface treatments. The process is specific to diamond and may not be directly applicable to other materials.
1：Experimental Design and Method Selection:
The study uses an optimized fabrication process for etching single-crystal diamond microdisks, inspired by the SCREAM process for silicon MEMS. It involves reactive ion etching and electron beam lithography to create undercut structures.
2：Sample Selection and Data Sources:
Optical grade, CVD-grown single-crystal diamond chips (3 mm x 3 mm) from Element Six are used, polished to surface roughness <5 nm RMS.
3：List of Experimental Equipment and Materials:
Equipment includes Oxford PlasmaPro 100 Estrelas and Cobra ICP systems for etching, Raith 150-TWO for electron beam lithography, PECVD for Si3N4 deposition, EBPVD for Ti and SiO2 deposition, and a Newport TLB-6700B tunable diode laser for optical characterization. Materials include ZEP 520A resist, Si3N4 hard mask, Ti anti-charging layer, and various chemicals for cleaning (e.g., piranha, HF).
4：Experimental Procedures and Operational Workflow:
Steps involve deposition of hard mask and resist, patterning via EBL, etching of hard mask and diamond, undercutting with O2 plasma, and optical characterization using fiber taper coupling.
5：Data Analysis Methods:
Optical quality factors are measured by fitting transmission spectra; SEM imaging is used to analyze etch quality; statistical analysis includes correlation coefficients and probability distributions for Q values.
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PlasmaPro 100 Estrelas
Deep Silicon Etching system
Oxford
Used for etching Si3N4 hard mask with C4F8/SF6 chemistry.
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PlasmaPro 100 Cobra
ICP system
Oxford
Used for anisotropic O2 plasma etching of diamond.
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Raith 150-TWO
Electron Beam Lithography system
Raith
Used for patterning ZEP 520A resist.
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TLB-6700B
Tunable Diode Laser
Newport
Used for optical characterization by coupling to devices via fiber taper.
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ZEP 520A
Electron Beam Resist
ZEP
Used as a resist for electron beam lithography.
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Si3N4
Hard Mask Material
Used as a hard mask for diamond etching.
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Ti
Anti-Charging Layer
Reduces charging during electron beam lithography.
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SiO2
Masking Layer
Used for pedestal shaping during undercutting.
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