研究目的

To review recent progress on improving electrical contacts to two-dimensional transition-metal dichalcogenide (TMDC) transistors, focusing on strategies to reduce contact resistance and enhance performance.

研究成果

The review concludes that while significant progress has been made in reducing contact resistance through various strategies (e.g., metal selection, doping, phase engineering, and interface modifications), contact issues remain a critical bottleneck. Future work should focus on advanced interface engineering, novel FET structures, and integration techniques to achieve optimal performance and practical applications.

研究不足

The review highlights that contact resistance in TMDC transistors remains 1–2 orders of magnitude higher than in Si CMOS, due to challenges such as Fermi level pinning, difficulty in forming strong covalent bonds, and limitations of traditional doping techniques. The sensitivity of 2D materials to interface properties and the need for customized designs and large-scale fabrication are also noted as constraints.