研究目的
To design and fabricate a broadband low-noise amplifier with sub-1 dB noise figure for use in millimeter-wave 5G base-stations, aiming to improve the overall noise performance of receivers.
研究成果
The fabricated LNA achieves a sub-1 dB noise figure and flat gain, demonstrating its suitability for millimeter-wave 5G base-stations. When integrated with prior-art CMOS receivers, it can provide a 4-6 dB improvement in overall noise figure, enhancing receiver performance.
研究不足
The LNA is designed for specific frequency bands (e.g., 21-27 GHz) and may not be optimized for other ranges. The use of GaAs technology, while offering low noise, adds cost compared to CMOS. The single-stage design might limit gain compared to multi-stage amplifiers.
1：Experimental Design and Method Selection:
The LNA is designed using a common-source topology with inductive source degeneration for simultaneous noise and input matching. The design process includes active device optimization and circuit implementation based on
2：1-μm InGaAs pHEMT technology. Sample Selection and Data Sources:
The LNA is fabricated and tested as a chip.
3：List of Experimental Equipment and Materials:
Keysight N5247A PNA network analyzer with source-corrected noise figure measurements (option 029) on the probe station, bonding wires for DC bias, and the fabricated LNA chip.
4：Experimental Procedures and Operational Workflow:
S-parameters and noise figure are measured from 10-GHz to 35-GHz using the network analyzer. DC bias is applied via bonding wires.
5：Data Analysis Methods:
Measurement results are analyzed to determine gain, bandwidth, return loss, and noise figure.
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