研究目的
To investigate corundum-structured p-type iridium oxide thin films and their band alignment with gallium oxide for potential use in high-quality hetero-junctions in electronic devices.
研究成果
P-type α-Ir2O3 thin films were successfully fabricated with a bandgap of 3.0 eV. The band alignment at the α-Ir2O3/α-Ga2O3 interface is type-II with valence and conduction band offsets of 3.3 eV and 1.0 eV, respectively, which is beneficial for designing electronic devices such as hetero-junction diodes.
研究不足
The growth rate of α-Ir2O3 was initially low with certain precursors, though improved with iridium chloride. The study focuses on thin films and hetero-junctions, with potential limitations in scalability or integration into full devices. Further optimization of growth conditions and electrical properties is needed.
1：Experimental Design and Method Selection:
The study used mist chemical vapor deposition (CVD) for growing thin films, selected for its safety, cost-effectiveness, and energy efficiency. X-ray photoemission spectroscopy (XPS) was employed to determine band alignment, and optical transmittance measurements were used to find bandgaps.
2：Sample Selection and Data Sources:
Sapphire substrates were used, cleaned ultrasonically with methanol, acetone, and ultrapure water. Thin films of α-Ga2O3 and α-Ir2O3 were grown on these substrates.
3：List of Experimental Equipment and Materials:
Equipment includes a mist CVD growth system, XPS equipment (ULVAC-Phi MT-5500 with Al Kα X-ray source), and optical transmittance measurement setup. Materials include gallium acetylacetonate and iridium chloride as precursors, deionized water, hydrochloric acid, methanol, acetone, and ultrapure water.
4：Experimental Procedures and Operational Workflow:
Precursors were atomized into mist particles and transferred to a reaction chamber for film growth. XPS measurements were performed at room temperature with specific operating conditions. Optical transmittance was measured to derive absorption coefficients and bandgaps.
5：Data Analysis Methods:
Band offsets were calculated using equations based on XPS core level and valence band maxima differences. Bandgaps were estimated by extrapolating (αhv)^2 vs. photon energy plots to zero.
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