研究目的
To propose a route for surface modification for p-type cobalt oxide-based gas sensors to enhance sensitivity.
研究成果
The surface modification via Ni doping and annealing significantly enhances gas sensitivity by nearly 200% for toluene and CO gases, attributed to the formation of NiO nanoparticles and heterogeneous junctions that alter electronic structures. This method is promising for mass-productive p-type Co oxide gas sensor fabrication.
研究不足
The study is limited to specific gases (CO and toluene) and temperature ranges; it may not generalize to other gases or conditions. The process optimization for mass production is not fully explored.
1：Experimental Design and Method Selection:
The study uses RF sputtering to deposit Ni on Co oxide films, followed by annealing, to modify the surface for gas sensing enhancement. Theoretical models include energy band diagrams for heterogeneous oxide junctions.
2：Sample Selection and Data Sources:
N-type silicon wafers with SiO2 insulating layers are used as substrates. Co oxide thin films are deposited using RF sputtering with a Co3O4 target, and Ni is sputtered on top. Gas sensing data is collected for CO and toluene gases at various temperatures.
3：List of Experimental Equipment and Materials:
Equipment includes RF sputtering system, hot plate for annealing, X-ray Diffraction (XRD, Bruker, New D8 advance, USA), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM, Jeol, JEM2100F, Japan), and a gas measurement system. Materials include Co3O4 target, Ni target, silicon wafers, SiO2, platinum electrodes.
4：Experimental Procedures and Operational Workflow:
Steps involve depositing Co oxide films via RF sputtering, sputtering Ni for 40 seconds at 50 W RF power, annealing at 350 °C for 15 min in air, fabricating platinum electrodes, and characterizing with XRD, SEM, TEM. Gas sensing properties are measured for 25 ppm CO and toluene gases from 150 to 350 °C.
5：Data Analysis Methods:
Data is analyzed using techniques from TEM (including FFT and EDS), SEM, XRD, and gas response measurements. Statistical analysis of sensitivity, response time, and recovery time is performed.
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X-ray Diffraction
New D8 advance
Bruker
Used for microstructure analysis of the thin films.
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Transmission Electron Microscopy
JEM2100F
Jeol
Used for in-depth materials characterization, including high-resolution imaging and chemical analysis.
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RF sputtering system
Used for depositing Co oxide and Ni thin films via sputtering process.
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Scanning Electron Microscopy
Used for surface morphology analysis of the thin films.
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Hot plate
Used for annealing the samples at 350 °C for 15 minutes in air.
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Gas measurement system
Used to characterize gas sensing properties to CO and toluene gases.
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