1：Experimental Design and Method Selection:

The study used current-voltage (I-V) measurements to investigate reverse annealing effects in silicon diodes irradiated with 1 MeV neutrons. The rationale was to monitor changes in electrical properties over time to understand defect behavior.

2：Sample Selection and Data Sources:

A commercial silicon p-i-n photodiode (Hamamatsu S3590-08) with an active area of 1 cm2 and thickness of 300 μm was irradiated to a fluence of 1e14 n-cm?2 at the National Energy Cooperation of South Africa.

3：List of Experimental Equipment and Materials:

Equipment included a Keithley 6487 picoammeter with a voltage source, a personal computer (PC) with Microsoft Excel and an add-in utility for control, an RS-232 cable for connection, and a fridge for storing the sample. The diode was the primary material under test.

4：Experimental Procedures and Operational Workflow:

I-V measurements were taken at room temperature (300 ± 2 K) in the dark, before and after irradiation. Measurements were performed in voltage steps (0.01 V to 0.1 V, 0.1 V to 1 V, 1 V to 100 V in reverse bias, and 0.01 V steps in forward bias with a current limit of 2.5 mA). Time between measurements was set to 1 s for stabilization. After irradiation, the sample was stored at sub-zero temperature for 2 weeks to allow radioactive decay, then measured periodically over 225 days under controlled temperature conditions.

5：01 V to 1 V, 1 V to 1 V, 1 V to 100 V in reverse bias, and 01 V steps in forward bias with a current limit of 5 mA). Time between measurements was set to 1 s for stabilization. After irradiation, the sample was stored at sub-zero temperature for 2 weeks to allow radioactive decay, then measured periodically over 225 days under controlled temperature conditions. Data Analysis Methods:

5. Data Analysis Methods: Data were analyzed by generating I-V profiles and trend plots at fixed voltages (e.g., 0.2 V for forward bias and 90 V for reverse bias) to observe changes in current over time, indicating defect activity and annealing effects.