1：Experimental Design and Method Selection:

The study used an X-ray photoelectron spectrometer (XPS) to characterize chemical bonds in a-IGZO:N films. Inverted-staggered a-IGZO:N TFTs were fabricated with RF sputtering for channel layers and DC sputtering for electrodes, followed by annealing. Electrical measurements were performed using a semiconductor analyzer.

2：Sample Selection and Data Sources:

Samples were prepared on heavily doped p-type silicon wafers with thermal SiO2 gate insulator. a-IGZO:N films were deposited with varying N2 flow rates (0-40 sccm).

3：List of Experimental Equipment and Materials:

Equipment includes XPS (Thermal-Fisher ESCALAB 250 with Mg beam source), semiconductor analyzer (Keithley 4200), RF sputtering system, DC sputtering system, and annealing furnace. Materials include p-type silicon wafers, SiO2, a-IGZO:N films, ITO films, and Ar/N2 gases.

4：Experimental Procedures and Operational Workflow:

Films were deposited using shadow masks for patterning, annealed at 698 K for 1 h. XPS measurements were done at room temperature. Electrical measurements involved scanning gate voltage from -20 V to 40 V with drain voltage at 10 V. Bias stress tests (PBS and NBS) and thermal stability tests were conducted.

5：Data Analysis Methods:

XPS spectra were deconvoluted using Gaussian fitting. Area ratios (AR) of sub-peaks were calculated. Defect formation energy (W) was extracted using a theoretical model based on threshold voltage shifts.