研究目的
To develop a method for deterministic placement of single photon emitters in two-dimensional materials using strain engineering with an atomic force microscope.
研究成果
The AFM indentation method enables precise strain engineering in 2D materials, allowing deterministic placement of SPEs with high repeatability and stability up to 60 K. This approach facilitates integration with photonic structures and provides a scalable platform for quantum technologies, with potential for further optimization in temperature stability and spectral control.
研究不足
The technique may be limited by the AFM's force range and tip sliding during large displacements; spectral wandering of SPEs (90-130 μeV) and g(2)(0) values not ideal due to background emission collection; inability to measure antibunching above 60 K due to signal-to-noise ratio issues.
1:Experimental Design and Method Selection:
The study uses an AFM-based approach to apply mechanical stress to a 2DM/polymer composite, creating localized strain fields to induce SPEs. The rationale is to achieve nanometer-scale precision in SPE placement.
2:Sample Selection and Data Sources:
Monolayer WSe2 grown by chemical vapor deposition is transferred onto PMMA films of varying thicknesses (e.g., 70 nm and 320 nm) on SiO2/Si substrates.
3:List of Experimental Equipment and Materials:
AFM (Park Systems NX10), cantilevers (Nanosensors SSS-NCHR, DT-NCHR, NCHR), PMMA, SiO2/Si wafers, WSe2, cryostats (Montana Instruments Cryostation C2), lasers (HeNe laser, Ti:sapphire laser), spectrometers, detectors (Si avalanche photodiodes).
4:Experimental Procedures and Operational Workflow:
AFM indentation is performed with controlled force or displacement; fluorescence imaging and photoluminescence mapping are conducted at low temperatures (e.g., 4 K) to detect SPEs; autocorrelation and time-resolved PL measurements are used to confirm single photon emission.
5:Data Analysis Methods:
Statistical analysis of indent depths and emission wavelengths, exponential fitting for lifetime measurements, and calculation of g(2)(0) values for antibunching confirmation.
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Atomic Force Microscope
NX10
Park Systems
Used for indenting the 2DM/polymer composite to create localized strain fields and SPEs.
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Cantilever
SSS-NCHR
Nanosensors
Used with AFM for indentation, with sharp tip for precise indents.
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Cantilever
DT-NCHR
Nanosensors
Used with AFM for indentation, with blunt tip for larger indents.
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Cantilever
NCHR
Nanosensors
Used with AFM for indentation, with intentionally blunted tip.
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Cryostat
Cryostation C2
Montana Instruments
Used for low-temperature photoluminescence measurements.
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Laser
HeNe laser
Used for excitation in photoluminescence and autocorrelation measurements.
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Laser
Ti:sapphire laser
Used for time-resolved photoluminescence measurements.
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Detector
Si avalanche photodiode
Used for detecting photons in autocorrelation and TRPL measurements.
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Spectrometer
LabRam HR Evolution
Horiba
Used for photoluminescence mapping and spectral analysis.
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