研究目的
Investigating the effect of substrate temperature on the structural and thermoelectric properties of RF-magnetron sputtered SnSe thin films.
研究成果
High substrate temperature (558 K) improves crystallinity, reduces defects, and enhances thermoelectric properties, achieving a maximum power factor of 1.4 μWcm-1K-2, suitable for applications, but further optimization is needed.
研究不足
The films exhibit lower thermoelectric performance compared to some other methods due to grain boundaries and porous defects; doping and boundary engineering may be necessary for improvement.
1：Experimental Design and Method Selection:
SnSe thin films were deposited using RF magnetron sputtering to study the impact of substrate temperature on properties. The Debye-Scherrer equation was used for grain size calculation.
2：Sample Selection and Data Sources:
Films were deposited on D263T Glass substrates at temperatures of 300 K, 423 K, 473 K, 493 K, and 558 K, named S1 to S
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, high-purity SnSe alloy target, D263T Glass substrates, Ar gas, XRD (Rigaku MiniFlex 600), SEM (Hitachi S-4800), EDS (Horiba X-max), XPS (PHI-5400), four-probe setup for electrical conductivity, temperature gradient method for Seebeck coefficient, Hall measurement system (Ecopia HMS 3000), AFM.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned ultrasonically, pre-sputtering for 5 min, deposition for 1 hour at 80 W power, base pressure below 6.0 × 10?4 Pa, working pressure 1.2 Pa, Ar flow 20 sccm. Characterization involved XRD, SEM, EDS, XPS, electrical and thermoelectric measurements.
5：0 × 10?4 Pa, working pressure 2 Pa, Ar flow 20 sccm. Characterization involved XRD, SEM, EDS, XPS, electrical and thermoelectric measurements. Data Analysis Methods:
5. Data Analysis Methods: XRD patterns analyzed for phase identification, FWHM used for grain size calculation, XPS for composition, statistical analysis of electrical and thermoelectric properties.
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XRD system
MiniFlex 600
Rigaku
Evaluating crystal structures of thin films with Cu Kα radiation.
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SEM
S-4800
Hitachi
Investigating cross section and surface morphology of films.
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EDS
X-max
Horiba
Identifying composition of films via energy-dispersive spectroscopy.
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XPS
PHI-5400
America
Studying chemical compositions of thin films.
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Hall measurement system
HMS 3000
Ecopia
Characterizing charge carrier mobility and carrier concentration using Van der Pau technique.
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AFM
Imaging surface morphology and measuring roughness.
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RF magnetron sputtering system
Depositing SnSe thin films on substrates.
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SnSe alloy target
Source material for sputtering deposition.
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Glass substrate
D263T
Base for thin film deposition.
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