研究目的
To demonstrate monolithic integration of enhancement/depletion-mode GaN-based metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and inverters on an ultrathin-barrier AlGaN/GaN heterostructure grown on Si substrates for power electronic applications.
研究成果
High VTH monolithically integrated E/D-mode GaN MIS-HEMTs and inverters were successfully realized on a UTB AlGaN/GaN heterostructure on Si substrates. The E-mode devices achieved a high threshold voltage of +3.3 V, and the inverters exhibited high logic swing voltage, small VTH hysteresis, and good uniformity. This technology platform is promising for compact GaN-based power modules and smart power integrated circuits.
研究不足
The study mentions that logic speed of the integrated MIS-HEMT inverter might be reduced by VTH hysteresis due to interface states, which could be improved by interface engineering. Additionally, noise margins could be further optimized by adjusting the drive/load ratio, requiring further investigation.
1：Experimental Design and Method Selection:
The study focuses on fabricating monolithically integrated E/D-mode GaN MIS-HEMTs using a UTB AlGaN/GaN heterostructure with a graded AlGaN back barrier to achieve high threshold voltage and good performance. Theoretical models include energy band diagram simulations for charge analysis.
2：Sample Selection and Data Sources:
The UTB-AlGaN/GaN heterostructure was grown by metal organic chemical vapor deposition on 4-inch Si substrates. Samples were processed and characterized for electrical properties.
3：List of Experimental Equipment and Materials:
Key equipment includes metal organic chemical vapor deposition system, inductively-coupled-plasma system, atomic-layer-deposition system, plasma-enhanced CVD system, and electrical measurement setups. Materials include AlGaN, GaN, SiNx, SiO2, Al2O3, Ti/Al/Ni/Au metal stacks, and various chemicals for cleaning and etching.
4：Experimental Procedures and Operational Workflow:
The process involves wafer cleaning, LPCVD-SiNx passivation, source-drain etching and ohmic contact formation, PECVD-SiO2 deposition, gate region processing with ALD-Al2O3 for E-mode devices, gate electrode formation, and post-gate annealing. Inverters were fabricated with specific gate width ratios.
5：Data Analysis Methods:
Electrical characterization included output characteristics, transfer characteristics, breakdown voltage measurements, and inverter performance analysis using standard semiconductor parameter analyzers and simulation tools for energy band diagrams.
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