研究目的
To examine the pinning and depinning fields of the vortex domain wall (VDW) in wide permalloy wires with asymmetric notches to better understand VDW dynamic behavior and compare it with narrow wires.
研究成果
The depinning behavior of vortex domain walls in wide wires is similar to that in narrow wires, with depinning fields increasing with notch depth ratio and decreasing for symmetric notches. Notch shape and VDW chirality influence the depinning field, indicating similar potential energy landscapes in both wire widths.
研究不足
The study is limited to specific notch geometries and wire widths; variations in wire uniformity and complex factors in wide wires may affect results. Simulation used a narrower wire (0.4 μm) to save time, which may not fully represent wide wire behavior.
1:Experimental Design and Method Selection:
The study employed magneto-optical Kerr effect (MOKE) microscopy for magnetic imaging and MuMax3 micromagnetic simulation software to analyze vortex domain wall (VDW) depinning behavior in wide permalloy wires with asymmetric notches. The experimental design involved varying notch depth ratios and asymmetric angles to observe their effects on depinning fields.
2:Sample Selection and Data Sources:
Samples were prepared using e-beam lithography and lift-off processes on Si wafers, with Ni80Fe20 (permalloy) thin films of approximately 20 nm thickness. The wire width was fixed at 2 μm, with notch depth ratios from 0.2 to 0.8 and asymmetric angles of 45°, 60°, and 75°.
3:2 to 8 and asymmetric angles of 45°, 60°, and 75°.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included e-beam lithography tools, magnetron sputtering system, MOKE microscopy setup with LED light source and CCD detector, and MuMax3 simulation software. Materials included Si wafers, poly(methyl methacrylate) (PMMA), acetone, and permalloy (Ni80Fe20).
4:0).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The procedure involved cleansing the wafer, spin-coating PMMA, e-beam writing for pattern transfer, magnetron sputtering for film deposition, lift-off with acetone, and magnetic field application along the wire axis. MOKE microscopy was used to capture magnetic images, and depinning fields were measured by slowly adjusting the magnetic field from ±191 Oe to -191 Oe.
5:Data Analysis Methods:
Data analysis involved determining depinning fields from magnetic images, comparing with simulation results from MuMax3, and statistical analysis of depinning field distributions based on notch parameters and VDW chirality.
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