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Investigation of local geometrical structure, electronic state and magnetic properties of PLD grown Ni doped SnO2 thin films

DOI:10.1016/j.elspec.2019.01.002 期刊:Journal of Electron Spectroscopy and Related Phenomena 出版年份:2019 更新时间:2025-09-23 15:22:29
摘要: We have investigated the ferromagnetic behavior, electronic states and local geometrical structure of Ni (2 and 10 at %) doped SnO2 thin films. The films were successfully fabricated with the help of pulsed laser deposition (PLD) technique on Si (100) substrate under ultrahigh vacuum (UHV) condition. X-ray diffraction (XRD) results revealed the single phase character of SnO2 rutile lattice structure with P42/mnm space group. The inclusion of Ni ions into SnO2 matrix induced oxygen vacancy (Vo), enhanced the distortion in octahedral local symmetry and reduced the oxidation state of the host Sn4+ (SnO2) to Sn3+ (Sn2O3) these details have been estimated by Raman scattering, Near edge X-ray absorption fine structure (NEXAFS) spectra at Ni L3,2 and O K edges. Further quantitative details on the local geometrical structure around Ni ions were obtained via fitting the experimental Fourier transforms EXAFS spectra |X(R)| with FEFF6 code. The magnetization measurements performed at room temperature (RT) infers that the observed magnetic behavior of the films seems to be relevant to the same crystal growth condition (UHV) and might not be limited directly to the Ni dopant concentrations. The FM signal and the role of surface defects have been discussed based spin-split impurity band difference in the saturation moments even with increase the Ni content. Hence, the similarity in Ni doped SnO2 films displayed ferromagnetic (FM) signal, and there was no significant Ferromagnetism etc. percolation mechanism.
作者: Mayuri Sharma,Rezq Naji Aljawfi,Kavita Kumari,K.H. Chae,S. Dalela,S. Gautam,P.A. Alvi,Shalendra Kumar
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Investigating the ferromagnetic behavior, electronic states, and local geometrical structure of Ni-doped SnO2 thin films to understand the correlation between ferromagnetism and structural defects induced by doping and growth conditions.

Ni-doped SnO2 thin films exhibit room-temperature ferromagnetism primarily due to oxygen vacancies induced by doping and UHV growth conditions, with surface defects playing a critical role. The magnetic behavior is not significantly affected by Ni concentration changes, suggesting defect-mediated mechanisms like bound magnetic polarons or charge transfer ferromagnetism.

The study is limited to specific Ni doping concentrations (2% and 10%) and UHV growth conditions; the ferromagnetic behavior may not generalize to other doping levels or growth environments. The role of surface defects versus bulk defects in magnetism requires further investigation.

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