研究目的
To develop a novel class of acid labile poly(aryl acetal) polymers for use in photoresist formulations for next-generation microlithography techniques, such as extreme ultraviolet (EUV) or electron beam lithography, aiming to improve resolution, stability, and etch resistance.
研究成果
A novel class of backbone degradable poly(aryl acetal) photoresist polymers was successfully developed using Suzuki polycondensation, demonstrating acid-induced degradation into soluble fragments. Polymers with 0-30% CHVE protection showed optimal lithographic performance, achieving resolutions down to 22 nm with low line width roughness in EUV lithography. This approach decouples polymerization from acid-sensitive group formation, allows synthetic flexibility, and provides high Tg polymers suitable for advanced lithography, with potential for further improvements in formulation and understanding of dissolution behavior.
研究不足
The acid degradation kinetics studied in solution may not fully predict behavior in thin films under vacuum due to factors like water retention and diffusion not being captured. Empirical parameters like Ohnishi and ring parameters might not accurately predict etch resistance for novel degradable polymers. The study focused on specific acetal types and protection levels, and further optimization for lower line width roughness and broader applicability may be needed.
1:Experimental Design and Method Selection:
The study involved synthesizing poly(aryl acetal) polymers using an optimized Suzuki polycondensation protocol. The design included acid-labile acetal linkages in the backbone and side chains, with a rigid polyaromatic framework for high Tg and free phenolic groups for adhesion and hydrophobicity modulation.
2:Sample Selection and Data Sources:
Monomers such as formaldehyde diphenylacetal, acetaldehyde diphenylacetal, and benzaldehyde diphenylacetal were synthesized from commercial starting materials. Polymers were synthesized with varying degrees of protection (e.g., CHVE protection) and molecular weights.
3:List of Experimental Equipment and Materials:
Equipment included NMR spectrometers, LC-MS systems, GPC for molecular weight analysis, DSC and TGA for thermal properties, and EUV lithography tools for patterning. Materials included various boronic esters, dibromophenols, catalysts like (t-Bu)3Pd(crotyl)Cl, bases like tripotassium phosphate, solvents like 1,4-dioxane and PGMEA, and acids like trifluoroacetic acid.
4:Experimental Procedures and Operational Workflow:
Monomer synthesis followed specific schemes (e.g., Scheme 2 for bisboronates). Polymerization was optimized with catalyst/base combinations, conducted in stages for random copolymerization, and included end-capping steps. Acid degradation studies were performed using NMR and LC-MS. Lithographic testing involved spin-coating formulations on silicon wafers and exposure to EUV light for patterning.
5:Data Analysis Methods:
Molecular weights were determined by GPC, acid degradation kinetics by NMR integration, and lithographic performance by measuring resolution and line width roughness from patterning experiments.
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NMR spectrometer
500 MHz
Used for monitoring acid degradation kinetics and characterizing polymer structure via 1H NMR spectroscopy.
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LC-MS system
Used for analyzing polymer degradation fragments and confirming molecular identities.
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GPC
Used for determining molecular weights (Mn and Mw) and polydispersity of synthesized polymers.
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DSC
Used for measuring glass transition temperatures (Tg) of polymers.
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TGA
Used for thermal gravimetric analysis to study polymer stability.
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EUV lithography tool
Used for exposing photoresist-coated silicon wafers to extreme ultraviolet light for patterning experiments.
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Spin coater
Used for applying photoresist formulations onto silicon wafers.
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Catalyst
(t-Bu)3Pd(crotyl)Cl
Used in Suzuki polycondensation reactions to achieve high molecular weight polymers.
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Base
tripotassium phosphate
Used in Suzuki polycondensation reactions as a base for coupling reactions.
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Solvent
1,4-dioxane
Used as reaction solvent in Suzuki polycondensation due to high boiling point and solubility properties.
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Solvent
PGMEA
Used as a common photoresist solvent for dissolving polymers.
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Acid
trifluoroacetic acid
Used for acid treatment to induce polymer degradation in solubility tests and NMR studies.
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Developer
TMAH
Used as an aqueous base developer for photoresist development, specifically 0.26 N tetramethylammonium hydroxide solution.
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