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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Common Mode Noise Analysis for a High Step-Up Converter with GaN Devices

DOI:10.1109/ECCE.2018.8557647 出版年份:2018 更新时间:2025-09-23 15:22:29
摘要: High Step-up converters have numerous applications in renewable energy systems and electric automotive industry. To improve the power density, an interleaved high step-up boost converter with coupled inductor was proposed. However, for practical applications is compulsory that this topology must comply with the CISPR standards. Therefore, to identify the noise sources in the analyzed converter, an equivalent noise modelling is conducted. These models revealed the dependency of inductor windings on different noise sources. For experimental analysis of the conducted emissions of this topology, GaN FETs based prototype is designed. Several tests were carried out to find the effect of various factors on noise emission. As results of tests, 1) Increasing the switching frequency generates increase in the noise spikes 2) Noise emissions from the converter do depend on its mode of operation 3) High peaks of noise are generated at low frequency range by reducing the voltage transition time across the switch.
作者: Bilal Ahmad,Wilmar Martinez,Jorma Kyyra
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To analyze common mode noise in a high step-up converter with GaN devices, identify noise sources through equivalent modeling, and experimentally validate the effects of switching frequency, operation modes, and voltage transition times on conducted emissions.

The equivalent noise model effectively identifies noise sources in the high step-up converter, showing that the central winding does not impact emissions from switches. Experimental results confirm that noise emissions increase with higher switching frequencies, vary with operation modes, and are influenced by voltage transition times. GaN devices enable high-frequency operation but exacerbate EMI issues. Recommendations include careful layout design to minimize parasitics and future studies on impedance balancing and voltage collapse mitigation.

The study is limited to conducted emissions analysis; radiated emissions are not addressed. The prototype uses specific GaN devices and parameters, which may not generalize to other components or topologies. Parasitic capacitances in the layout could be minimized but not eliminated, affecting results. Future work is needed for impedance balancing and detailed analysis of voltage collapse phenomena.

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