1：Experimental Design and Method Selection:

The study compares two isolation methods for GaN p-n diodes: mesa-structure formed by ICP-RIE and planar-structure formed by oxygen ion implantation. The rationale is to reduce surface damages and leakage current. Theoretical models include electric field simulation using TCAD software.

2：Sample Selection and Data Sources:

GaN homojunction epitaxial layers were grown on a 400 μm n-type GaN substrate by metal-organic chemical vapor deposition (MOCVD). The layers include n+-GaN, n--GaN, undoped GaN, p+-GaN, and p++-GaN contact layer.

3：List of Experimental Equipment and Materials:

Equipment includes MOCVD system for epitaxial growth, ICP-RIE for etching, ion implanter for oxygen implantation, PECVD for SiO2 deposition, α-step for thickness measurement, Keysight B1505A source meter for I-V measurements, Cascade Microtech Tesla probe station, and EMMI for fault analysis. Materials include GaN substrate, oxygen ions, Ni/Au and Ti/Au metals, SiO2 for passivation.

4：Experimental Procedures and Operational Workflow:

Steps involve epitaxial growth, isolation by ICP-RIE or ion implantation (with doses of 5e13, 1e14, 5e14 cm-2 at energies 50, 100, 200 keV), anode metal deposition and annealing, SiO2 passivation, cathode deposition, and electrical characterization including forward and reverse I-V, capacitance, temperature-dependent measurements, and EMMI imaging.

5：Data Analysis Methods:

Data analyzed using TLM for contact resistance, capacitance-voltage for doping concentration, I-V curves for VF, RONA, VB, BFOM calculation, temperature-dependent analysis for activation energy and junction temperature, and TCAD simulation for electric field distribution.