研究目的
To estimate the efficiency of Mach-Zehnder modulators using only electrical characteristics for wafer-level testing.
研究成果
The breakdown voltage of the PN junction correlates with modulator efficiency, allowing estimation without optical inputs, thus reducing testing time and cost for silicon photonics devices.
研究不足
The method may have differences between breakdown types A and B due to different depletion layer expansion rates, and it relies on specific fabrication conditions such as carrier densities.
1：Experimental Design and Method Selection:
The method involves using test element groups (TEGs) fabricated on the same die to imitate phase shifters with PN junctions at different positions, correlating breakdown voltage with modulator efficiency.
2：Sample Selection and Data Sources:
Devices were fabricated on an 8-inch-SOI wafer with 32 mm x 25 mm dies; 11 dies were randomly selected, each containing the same MZM design.
3：List of Experimental Equipment and Materials:
An 8-inch-SOI wafer, dies with MZMs and TEGs.
4：Experimental Procedures and Operational Workflow:
Measured breakdown voltages of TEGs and transmission spectra of MZMs with various bias voltages.
5：Data Analysis Methods:
Correlation coefficients were calculated between breakdown voltage and parameter x, and relationships between Vπ and breakdown voltage were analyzed with R2 values.
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