摘要： Nanosecond pulse discharge plasma has many prospects in industrial applications, and high voltage repetitive nanosecond pulse generators with compact design and light weight have become one of the key issues limiting its development in some applications. This paper presents a high voltage series-connected SiC MOSFETs module which can be served as the main switch in a repetitive high voltage nanosecond pulse generator. This kind of series-connected MOSFETs module with only single external gate driver requiring very few components is very suitable for compact assembly. By analyzing the working principle, three topologies of series-connected MOSFETs module are proposed. The switching behaviors of the three different topologies with four SiC MOSFETs series-connected are compared experimentally. The variation of switching characteristics of series-connection SiC MOSFETs module with different numbers of devices are investigated. The layout is also optimized to shorten pulse front time and improve output pulse quality. Furthermore, a 10 kV SiC MOSFETs module with a turn-on transition time ~10 ns is developed. The double pulse test result demonstrates excellent switching performances. Finally, a compact and high voltage pulse generator composed of three 10 kV SiC MOSFETs module is tailored, with a typical rise time ~40 ns and peak voltage of ~30 kV.