研究目的
To investigate the rectification behavior observed in a device with a ReSe2 flake suspended between Au contacts, originally designed for measuring transport properties, and to analyze the underlying mechanisms involving Schottky and p-n heterojunction contacts.
研究成果
The rectification behavior in the Au-ReSe2-Au device is due to the asymmetry between the ReSe2-Si p-n heterojunction and the Si-Au Schottky contact, both exhibiting rectification. Experimental results align well with predictions from thermionic emission theory, confirming the mechanism. Future studies could optimize device design for better performance and explore other 2D materials.
研究不足
The experiment was limited to temperatures between 273 K and 340 K. The surface roughness of the Si substrate from etching may affect contact homogeneity, leading to non-ideal behavior. The device was not optimized for rectification initially, and the analysis relies on assumptions from Schottky theory.
1：Experimental Design and Method Selection:
The experiment was designed to measure thermal and electrical conductivities of a ReSe2 flake, but rectification behavior was observed. Methods include device fabrication using electron beam lithography, physical vapor deposition, wet transfer of ReSe2, and electrical measurements using a digital multimeter and physical property measurement system. Theoretical analysis based on thermionic emission theory was employed.
2：Sample Selection and Data Sources:
A ReSe2 flake synthesized by chemical-vapor-transition on a copper substrate was used. Data were collected from I-V curve measurements at temperatures of 273 K, 280 K, 310 K, and 340 K.
3：List of Experimental Equipment and Materials:
Equipment includes SEM, AFM, Raman spectrometer, digital multimeter (Keithley 2002), physical property measurement system, electron beam lithography system, spin coater, and etching solutions. Materials include Si substrate, SiO2, Au, ReSe2, PMMA, and potassium hydroxide.
4：Experimental Procedures and Operational Workflow:
Fabricate Si substrate with Au electrodes using lithography and etching. Transfer ReSe2 flake using wet transfer method. Remove PMMA with potassium hydroxide. Perform SEM, AFM, and Raman spectroscopy for characterization. Measure I-V curves at specified temperatures using the multimeter and reference resistor.
5：Data Analysis Methods:
Analyze I-V curves to observe rectification. Use thermionic emission equations to model current behavior. Compare experimental data with theoretical predictions. Perform EDS for elemental analysis.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
