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Electrical Transport Properties of Thin Film Composed of a-ZnO Nanorods

DOI:10.2174/2468187307666161213125657 期刊:Current Nanomaterials 出版年份:2017 更新时间:2025-09-23 15:22:29
摘要: Background: Due to its wide band gap, high exciton binding energy and high breakdown strength, the nanostructures of ZnO may find applications for electronic, photonic devices, and high-frequency applications. Objective: The aim of the present work is to study electrical transport of thin film composed of a-ZnO nanorods. Method: Physical vapour condensation method was employed to fabricate the nanorods of ZnO. The morphology of these nanorods was investigated with the help of scanning electron microscope. X-ray diffraction pattern of as-prepared thin film was recorded using X-ray diffractometer. For dc conductivity measurements, four-probe method was used. Result: The as-prepared ZnO nanorods have diameter ranging from 10-20 nm and the length is of order of few hundred nanometers. XRD pattern of film composed of ZnO nanorods suggests the amorphous nature. Temperature dependence of dc conductivity has been studied over the temperature range of (297- 4.2K). For the temperature range of 297-120K, Mott’s three dimensional variable range hopping (VRH) is applied to explain the electrical conduction. For lower temperature range (120 - 4.2K), 2D-variable-range hopping in localized states near the Fermi level may be responsible for the transport of carriers. Conclusion: Variable range hopping mechanism (VRH) has been suggested for the entire temperature range (298-4.2K) on the basis of temperature dependence of dc conductivity data, which changes from 3D to 2D on moving to lower temperatures side (below 125K).
作者: Islam Uddin
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The aim of the present work is to study electrical transport of thin film composed of a-ZnO nanorods.

The electrical conduction in amorphous ZnO nanorods is governed by variable range hopping mechanisms, transitioning from 3D VRH at higher temperatures (297-120K) to 2D VRH at lower temperatures (120-4.2K). This is supported by temperature-dependent conductivity data and parameter calculations, indicating disorder in the nanostructure. The findings align with previous studies on ZnO films and suggest potential for applications in electronic devices, with recommendations for future work on material modifications and extended temperature or morphological studies.

The study is limited to amorphous ZnO nanorods fabricated by physical vapour condensation, which may not represent crystalline or other morphologies. The temperature range is broad but focused on low-temperature behavior, and the models assume specific hopping mechanisms that might not capture all transport phenomena. Potential optimizations include exploring other synthesis methods or doping to alter properties.

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