研究目的
To develop new interlayer dielectric materials with low dielectric constant and high thermal stability for ultralarge-scale integrated circuits by synthesizing and characterizing novel star-shaped benzocyclobutene-based monomers and their cured resins.
研究成果
The synthesized TDSDES-BCB and THSV-BCB resins exhibit low dielectric constants (2.43 and 2.46 at 10 MHz) and high thermal stability (T5% of 467°C and 454°C), attributed to the free volume from star-shaped structures and crosslinked networks. These materials show promise for applications in microelectronics and semiconductors, offering improved performance for next-generation integrated circuits.
研究不足
The study is limited to the specific synthesized monomers and may not generalize to other structures. Potential optimizations include exploring different star-shaped designs or curing conditions to further enhance properties.
1:Experimental Design and Method Selection:
The study involved synthesizing two novel star-shaped monomers (TDSDES-BCB and THSV-BCB) via hydrosilylation reactions, followed by curing to form thermosetting resins. Characterization methods included NMR spectroscopy, mass spectrometry, FTIR, DSC, TGA, nanoindentation, and dielectric measurements to analyze structure, curing behavior, thermal stability, mechanical properties, and dielectric properties.
2:Sample Selection and Data Sources:
Monomers were synthesized from purchased and prepared precursors. Cured resin samples were prepared for testing.
3:List of Experimental Equipment and Materials:
Equipment included Bruker Avance-600 NMR spectrometer, Nicolet FTIR 5700 spectrophotometer, TA 2100 TGA, TA Instruments DSC Q2000, Agilent Nano Indenter G200, Agilent 4294A Impedance Analyzer. Materials included TMSS, 4-DMVSBCB, DVS-S-BCB, chloroplatinic acid hexahydrate, toluene, petroleum ether, ethyl acetate.
4:Experimental Procedures and Operational Workflow:
Synthesis involved hydrosilylation at 80°C for 48 hours, purification by column chromatography. Curing was done stepwise at 180°C, 200°C, 220°C, and 250°C. Characterization involved standard procedures for each technique, e.g., NMR analysis with CDCl3 solvent, FTIR on KBr plates, TGA at 10°C/min in N2, dielectric measurements with sputtered electrodes.
5:Data Analysis Methods:
Data were analyzed using standard methods for each technique, e.g., dielectric constant calculated from capacitance, thickness, and area; pore size distribution analyzed by BJH method; mechanical properties from nanoindentation curves.
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