研究目的
To develop high-performance AlGaN/GaN HEMT devices with high channel conductivity, high breakdown field strength, and low current collapse by using Si δ-doped AlGaN back barriers to address issues from carbon-doped GaN buffers.
研究成果
The fabricated AlGaN/GaN/Si δ-doped AlGaN/GaN:C HEMT device demonstrates high performance with a maximum drain current of 720 mA/mm, peak transconductance of 210 mS/mm, breakdown field strength of 1.1 MV/cm, and specific on-resistance of 0.53 mΩ·cm2. The Si δ-doped AlGaN back barrier effectively suppresses current collapse and enhances channel conductivity while maintaining high breakdown behavior, showing great potential for power switching applications.
研究不足
The use of Si δ-doped AlGaN back barrier slightly degrades OFF-state leakage and gate reverse leakage compared to the reference device. The breakdown voltage is also slightly reduced. The study is limited to specific device geometries and materials, and further optimization may be needed for broader applications.
1：Experimental Design and Method Selection:
The study designed and fabricated AlGaN/GaN HEMT devices with and without Si δ-doped AlGaN back barriers to compare performance. Metal-organic chemical vapor deposition (MOCVD) was used for epitaxial growth, and device fabrication involved standard processes including ohmic contact formation, passivation, and gate formation. Double pulsed I-V measurements and simulations were employed to assess current collapse and electric field distributions.
2：Sample Selection and Data Sources:
Two heterostructures were grown on 3-inch (111) Si substrates: one with a Si δ-doped AlGaN back barrier (control device) and one without (reference device). Data were collected from electrical measurements such as C-V characteristics, transfer curves, and breakdown voltage tests.
3：List of Experimental Equipment and Materials:
MOCVD system for epitaxy, Ti/Al/Ni/Au for source/drain electrodes, PECVD for SiN passivation, e-beam evaporation for gate formation, and plasma etching for isolation. Materials include GaN, AlGaN, carbon dopants, and silicon substrates.
4：Experimental Procedures and Operational Workflow:
Epitaxial growth of heterostructures, device fabrication (ohmic contacts, passivation, gate formation), electrical characterization (C-V, I-V, pulsed measurements), and simulation of trap distributions and electric fields.
5：Data Analysis Methods:
Analysis of 2DEG density, mobility, transconductance, breakdown voltage, and current collapse using standard semiconductor device characterization techniques and simulation tools.
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