研究目的
To propose and verify an online junction temperature extraction method for SiC power MOSFETs based on the electroluminescence phenomenon of the body diode, using a temperature sensitive optic parameter (TSOP) approach.
研究成果
The electroluminescence in SiC MOSFETs provides a stable and contactless means for online junction temperature estimation, with errors less than ±5°C in experimental verification. It offers advantages over existing methods by being immune to package aging and electromagnetic interference, though sensitivity improvements are needed for broader application.
研究不足
The method has relatively lower sensitivity and requires calibration; it is only applicable when the body diode is conducting (e.g., during dead time in inverters), and the light detection may be affected by ambient conditions and fiber positioning.
1：Experimental Design and Method Selection:
The study investigates the electroluminescence phenomenon in SiC MOSFET body diodes, develops an electro-thermal-optic model, and designs a photosensitive circuit for light detection.
2：Sample Selection and Data Sources:
Commercial SiC MOSFETs from vendors like CREE and Rohm are used, with decapsulated devices for direct observation.
3：List of Experimental Equipment and Materials:
Includes SiC MOSFETs, current sources, heating plates, optic fibers, spectrometers, photodiodes (e.g., SFH250V), differential amplifiers, and a 5kVA SiC inverter.
4：Experimental Procedures and Operational Workflow:
Spectrum measurements are conducted under controlled temperatures and currents; the method is tested in continuous forward current and PWM inverter conditions with junction temperature calibration.
5：Data Analysis Methods:
Linear regression analysis is used to relate light intensity to junction temperature and forward current, with error analysis against fiber optic thermometer measurements.
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SiC MOSFET
C2M0025120D
CREE
Power switching device used in the inverter; its body diode exhibits electroluminescence for temperature sensing.
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Photodiode
SFH250V
Infineon
Detects light emitted from the SiC MOSFET for converting optical signals to electrical signals in the temperature sensing circuit.
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SiC MOSFET
SCT3030KL
Rohm
Power switching device used in the inverter; its body diode exhibits electroluminescence for temperature sensing.
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Fiber Optic Thermometer
OTG-F
Opsens Solutions
Used as a reference for accurate junction temperature measurement with high resolution and fast response.
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Optic Grating Spectrometer
Measures the spectrum of light emitted from the SiC MOSFET to analyze wavelength and intensity.
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Quartz Optic Fiber
Transmits light from the SiC MOSFET to the spectrometer or photodiode for detection.
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Differential Amplifier
Amplifies the differential signal from photodiodes to reduce ambient light interference in the sensing circuit.
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3-axis Precision Displacement Platform
Stabilizes the position of the optic fiber for consistent light detection in experiments.
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