研究目的
Investigating the high voltage endurance and switchable resistance effect in nanoscale copper groove structures using electric pulse and laser illumination.
研究成果
The nanoscale copper groove structure exhibits high reverse voltage endurance and non-volatile switchable resistance through laser-assisted electric pulses, attributed to Schottky barrier changes and charge trapping effects. This can lead to new high-voltage diodes and control devices.
研究不足
The reverse voltage endurance is limited by experimental facilities (e.g., up to 200V), and the forward current is affected by Cu layer thickness. The mechanism relies on specific material properties and may not generalize to other systems.
1：Experimental Design and Method Selection:
The study involves designing a nanoscale groove structure with discontinuous Cu nanoparticles and bulk Cu layers on an n-type Si substrate to form Schottky junctions. Radio-frequency sputtering is used for deposition, and electric pulses combined with laser illumination are applied to modulate resistance.
2：Sample Selection and Data Sources:
n-type Si (111) substrate with 1.2nm native oxide layer, resistivity 50-80 Ω·cm, and high-purity copper target (99.9999%) are used. Samples include variations in Cu layer thicknesses (e.g., 6nm-2nm-6nm and 24nm-2nm-24nm).
3：2nm native oxide layer, resistivity 50-80 Ω·cm, and high-purity copper target (9999%) are used. Samples include variations in Cu layer thicknesses (e.g., 6nm-2nm-6nm and 24nm-2nm-24nm).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes radio-frequency sputtering system, AFM for imaging, semiconductor laser (430 nm wavelength, 50 μm spot diameter, 3.7mW power), electric pulse generator (pulse width about 1 second), and indium electrodes.
4：7mW power), electric pulse generator (pulse width about 1 second), and indium electrodes.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Deposition of Cu films using masks to create groove and bulk areas, formation of electrodes by alloying indium, application of electric pulses with laser illumination, and measurement of I-V characteristics using probes.
5：Data Analysis Methods:
Analysis of I-V curves to observe diode characteristics, reverse voltage endurance, and resistance switching; use of barrier models and energy band diagrams to interpret results.
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