研究目的
To review the progress of power field effect transistors based on ultra-wide bandgap Ga2O3 semiconductor material, including its physical properties, recent developments in FET structures, and prospects for power electronics applications.
研究成果
Ga2O3 shows great promise for high-power electronics due to its excellent properties, but challenges such as p-type doping and thermal management need to be addressed for future advancements in FET applications.
研究不足
The research is limited by the absence of effective p-type doping in Ga2O3, low thermal conductivity leading to self-heating effects, and the early stage of device development, which restricts full exploitation of material properties.
