研究目的
To investigate the impact of a metal-insulator-semiconductor (MIS) structure on improving electron injection between the n-AlGaN layer and the electrode metal, and to conduct a parametric study on factors such as insulator affinity, dielectric constant, bandgap, thickness, and length.
研究成果
The MIS structure reduces surface depletion and increases electron concentration in the n-AlGaN layer, improving electron injection and reducing forward voltage. The bandgap of the insulator has negligible impact, while electron affinity and relative dielectric constant are critical; materials like Si3N4 and SiO2 are recommended. Insulator thickness and length must be optimized, with 1 nm thickness and reduced length for thick insulators suggested. Combining MIS with thermal annealing could further reduce forward voltage in AlGaN-based devices.
研究不足
The numerical models do not consider thermal annealing and metal alloying effects, which are important for achieving Ohmic contacts in experiments. This results in rectifying I-V curves instead of Ohmic ones. The study is based on simulations, not physical experiments, limiting direct applicability to real-world devices.
1：Experimental Design and Method Selection:
The study uses numerical simulations with Crosslight APSYS ver. 2010 to model the MIS structure, solving drift-diffusion and continuity equations with models for doping-dependent carrier mobility, thermionic emission, field emission, thermionically assisted field emission, and Fermi-Dirac distributions.
2：Sample Selection and Data Sources:
The structure is an n-AlGaN layer with 40% AlN and Si doping concentration of 5e18 cm^-3, with strip electrodes of 100 μm length and width. Different cathodes are designed with inserted insulator layers.
3：List of Experimental Equipment and Materials:
The simulator Crosslight APSYS ver. 2010 is used; no physical equipment is mentioned. Materials include various insulators like Al2O3, AlN, Si3N4, and SiO2 with parameters from Table
4：Experimental Procedures and Operational Workflow:
Parameters such as electron affinity, bandgap, relative dielectric constant, thickness, and length of the insulator are varied in simulations. I-V characteristics and energy band diagrams are calculated at specific voltages (e.g., 35 V) and currents (e.g., 210 mA).
5：Data Analysis Methods:
Analysis involves comparing I-V curves, energy band diagrams, electron concentration profiles, and electric field profiles to assess electron injection and forward voltage.
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