研究目的
Investigating the influence of oxygen content on the structure and electric transport properties of titanium oxide thin films, including Ti2O, TiO1+d, and g-Ti3O5, grown by pulsed laser deposition.
研究成果
The study successfully grew Ti2O, TiO1+d, and g-Ti3O5 thin films with metallic, superconducting, and semiconducting properties, respectively. Increasing oxygen content leads to higher resistivity, increased disorder, decreased electron density of states, enhanced carrier localization, and suppressed superconductivity in TiO1+d films.
研究不足
The oxygen content is not uniform at different areas, and there is a certain error in EELS quantification. The study did not obtain Ti2O3 films, possibly due to a narrow oxygen pressure range at 850°C.
1:Experimental Design and Method Selection:
Titanium oxide thin films with different oxygen contents were grown on a-Al2O3 substrates using pulsed laser deposition (PLD) under varying oxygen pressures. The method was chosen for its capability to control stoichiometry by tuning oxygen pressure.
2:Sample Selection and Data Sources:
Commercial (0001)-oriented a-Al2O3 single crystalline substrates and a pure titanium target (99.99% purity) were used. Oxygen pressures ranged from 4e-4 Pa to 1e-3 Pa.
3:99% purity) were used. Oxygen pressures ranged from 4e-4 Pa to 1e-3 Pa. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment includes a PLD system with KrF excimer laser (λ=248 nm), X-ray diffractometer (Panalytical X'pert), cryo FESEM (JSM-6700F), AFM (MultiMode V), TEM (Talos F200X), and PPMS-9T (Quantum Design). Materials include high-purity oxygen gas and substrates.
4:Experimental Procedures and Operational Workflow:
Films were deposited at 850°C, with laser parameters set (50 mJ pulse energy, 2.5 mm2 ablation area, 2.0 J/cm2 energy density, 5 Hz repetition rate, 4.5 cm target-substrate distance). After deposition, films were cooled naturally. Characterization involved XRD, SEM, AFM, TEM, EELS, and resistivity measurements.
5:5 mm2 ablation area, 0 J/cm2 energy density, 5 Hz repetition rate, 5 cm target-substrate distance). After deposition, films were cooled naturally. Characterization involved XRD, SEM, AFM, TEM, EELS, and resistivity measurements. Data Analysis Methods:
5. Data Analysis Methods: XRD patterns analyzed for phase identification, EELS for oxygen content quantification, resistivity data fitted using Bloch-Grüneisen, VRH, TA, and SPH models.
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X-ray diffractometer
Panalytical X'pert
Panalytical
X-ray diffraction measurements for phase identification
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Cryo field emission scanning electron microscopy
JSM-6700F
JEOL
Measurement of film thicknesses and surface morphologies
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Atomic force microscope
MultiMode V
Bruker
Measurement of surface roughness
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Transmission electron microscopy
Talos F200X
FEI
Structure and chemical composition characterizations, including HAADF-TEM and EELS
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Physical Property Measurement System
PPMS-9T
Quantum Design
Measurement of resistivity using a four-probe method
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KrF excimer laser
248 nm wavelength
Ablation of the titanium target for film deposition
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Titanium target
99.99% purity
Source material for ablation in PLD
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a-Al2O3 substrate
(0001)-oriented single crystalline
Substrate for film growth
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