研究目的
To study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (FETs) by introducing amorphous defective regions (latent tracks) in MoSe2 using swift heavy ion irradiation.
研究成果
The research concludes that swift heavy ion irradiation introduces latent tracks in MoSe2, leading to reduced carrier mobility and increased resistance in FETs at higher ion fluences, due to strong localization and scattering of electrons. This provides insights into defect engineering in 2D materials and suggests future studies on other materials to extend these findings.
研究不足
The study is limited to multilayer MoSe2 and specific irradiation conditions (1.8 GeV Ta ions), which may not generalize to other MDCs or ion types. The analysis assumes constant temperature (room temperature) and does not explore temperature-dependent effects. Potential optimizations include varying ion energy, material thickness, or extending to other 2D materials for broader applicability.
1：Experimental Design and Method Selection:
The study involved irradiating multilayer MoSe2 FETs with 1.8 GeV Ta ions at varying ion fluences to create latent tracks and analyze their impact on electronic transport. Methods included SHI irradiation, electrical characterization, and microstructural analysis using AFM, HRTEM, and Raman spectroscopy. Theoretical models like the thermal spike model and variable-range-hopping (VRH) mechanism were employed to explain electronic behavior.
2：8 GeV Ta ions at varying ion fluences to create latent tracks and analyze their impact on electronic transport. Methods included SHI irradiation, electrical characterization, and microstructural analysis using AFM, HRTEM, and Raman spectroscopy. Theoretical models like the thermal spike model and variable-range-hopping (VRH) mechanism were employed to explain electronic behavior. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: MoSe2 nanosheets were mechanically exfoliated from bulk MoSe2 crystals (Goodfellow Cambridge Limited) and transferred onto SiO2/Si wafers. Samples included pristine and irradiated devices, with thicknesses ranging from 1.2–10 nm (2–12 layers). Data were sourced from electrical measurements and microscopy observations.
3：2–10 nm (2–12 layers). Data were sourced from electrical measurements and microscopy observations. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a heavy ion research facility (HIRFL) for irradiation, atomic force microscope (AFM, Cypher, Asylum Research), high-resolution transmission electron microscope (HRTEM, Tecnai G2 F20, FEI), semiconductor parameter analyzer (Keithley, 4200SCS), probe station (Süss, PM8), and confocal Raman spectrometer (Lab RAM HR800, Jobin Yvon Co.). Materials included MoSe2 crystals, SiO2/Si wafers, Au/Ti electrodes, and copper grids.
4：Experimental Procedures and Operational Workflow:
Devices were fabricated by exfoliating MoSe2, defining electrodes via electron-beam lithography and evaporation, and irradiating with Ta ions at room temperature in high vacuum. Electrical characteristics (output and transfer) were measured before and after irradiation. Morphology and structure were analyzed using AFM, HRTEM, and Raman spectroscopy, with specific parameters like ion fluence, energy loss, and measurement conditions controlled.
5：Data Analysis Methods:
Data analysis involved calculating carrier mobility and resistance from electrical plots, using equations for mobility and resistance. Statistical analysis of microstructural changes (e.g., track diameter from HRTEM) and Raman shifts was performed to correlate with electronic transport behavior.
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High-Resolution Transmission Electron Microscope
Tecnai G2 F20
FEI
Used to observe the morphology and structure of latent tracks in irradiated MoSe2 flakes, providing detailed images of track cores and surrounding crystalline regions.
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Semiconductor Parameter Analyzer
4200SCS
Keithley
Used to measure the electrical characteristics (output and transfer) of the pristine and irradiated MoSe2 FET devices.
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Atomic Force Microscope
Cypher
Asylum Research
Used to investigate the morphology of the devices before and after irradiation, including the formation of latent tracks on MoSe2 surfaces.
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Probe Station
PM8
Süss
Used in conjunction with the semiconductor parameter analyzer for electrical measurements of the FET devices.
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Confocal Raman Spectrometer
Lab RAM HR800
Jobin Yvon Co.
Used for Raman spectroscopy analysis of pristine and irradiated devices to study structural changes, such as shifts in A1g modes.
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Heavy Ion Research Facility
HIRFL
Institute of Modern Physics, CAS
Used to supply 1.8 GeV Ta ions for swift heavy ion irradiation of the MoSe2 FET devices.
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Electron Beam Evaporator
Used to deposit Au (60 nm)/Ti (5 nm) electrodes for the source and drain contacts on MoSe2 flakes.
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Electron-Beam Lithography System
Used to determine precise coordinates and define patterns for electrode deposition on MoSe2 flakes.
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Faraday Cylinder
Used to calibrate the ion fluence during irradiation experiments.
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3-Foil Aluminum Detector
Used to calibrate the ion fluence and adjust ion energy at the sample surface during irradiation.
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