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AIP Conference Proceedings [Author(s) PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON AUTOMOTIVE INNOVATION GREEN ENERGY VEHICLE: AIGEV 2018 - Kuantan, Malaysia (25–26 July 2018)] - Chemical bath deposition of In2S3 thin films as promising material and buffer layer for solar cells
摘要： The copper(I) and indium thin films are obtained by chemical bath deposition (CBD). Their elemental composition and microstructure were particularly studied by means of the x-ray photoelectron spectroscopy (XPS). The change in the surface microstructure of thin films depending on the temperature and the composition of reaction bath were determined by means of scanning electron microscopy (SEM).
关键词： chemical bath deposition,solar cells,thin films,buffer layer,In2S3
更新于2025-11-21 11:20:48
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Synthesis of Indium Sulfide/Zinc Oxide Composites Films and their Photocatalytic Activities
摘要： Indium sulfide and zinc oxide (In2S3-ZnO) films have successfully synthesized by doctor blading method coupling with low temperature precipitation-reflux rout. The weight ratio of In2S3 was varied from 0–70 wt.%. Physical characterization results obtained from various analytical techniques exhibit the well crystallinity phase of cubic β-In2S3 and wurtzite ZnO structure from XRD patterns. TEM micrograph of 35% In2S3-ZnO sample showed the small ZnO particles are embedded into β-In2S3. The obtained results exhibited the phase well crystallinity of cubic β-In2S3. A strong adsorption spectra shifted toward visible light region and the narrower optical band gap results of In2S3-ZnO composite films suggesting that synthesized samples could be used as the visible-light-driven photocatalyst. The photocatalytic activity of rhodamine B had been investigated over entire composite films under visible light illumination. It can be seen that the entire In2S3-ZnO composite catalyst films revealed degradation of rhodamine B performance obviously higher than pure ZnO and pure In2S3. Moreover, the highest photocatalytic activity was found from 35% wt. In2S3-ZnO film which showed 69.5% degradation within 4 h under visible light irradiation.
关键词： ZnO,β-In2S3,Composite film,Rhodamine B
更新于2025-09-23 15:22:29
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Oriented ZnmIn2Sm+3@In2S3 heterojunction with hierarchical structure for efficient photocatalytic hydrogen evolution
摘要： It remains a great challenge to design and prepare highly efficient semiconductor-based photocatalysts for water splitting. To achieve this goal, the design of oriented heterojunctions for efficient carrier transport and separation is a new strategy based on their conductive anisotropy. Herein, a novel oriented J-J type ZnmIn2Sm+3@In2S3 heterojunction photocatalyst with hierarchical structures is fabricated with the assistance of oxalic acid. The hierarchical structures consist of ‘flower-like’ hollow ZnmIn2Sm+3 microspheres with epitaxially grown quantum confined In2S3 along the petal rims (J-J type heterojunction). This heterojunction improves the transport and separation of the photoexcited carriers, and extends the visible-light response range. Thus, the heterojunction photocatalyst exhibits significantly enhanced photocatalytic activity with a hydrogen evolution rate of 330 μmol h-1, which is about 4 times higher than that of single ZnIn2S4. The findings provide new insights to construct efficient oriented heterojunctions for anisotropic semiconductors.
关键词： ZnmIn2Sm+3,hierarchical structures,oxalic acid,oriented heterjunctions,In2S3
更新于2025-09-23 15:21:21
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Effect of annealing on the physical properties of thermally evaporated In2S3 thin films
摘要： The structural, compositional, morphological and optical properties of In2S3 thin films, prepared by thermal evaporation technique and annealed in sulfur ambient at different temperatures have been investigated. The grazing incident X-ray diffraction patterns have indicated polycrystalline form and predominantly cubic structure of annealed In2S3 films. The scanning electron microscopy revealed textured surface with uniformly distributed grains and the grain size increased with increase of annealing temperature. The optical parameters of the films have been determined using conventional transmission and reflection spectra as well as from surface photovoltage measurements.
关键词： Surface photovoltage,Annealing,In2S3 thin films,Structure,Optical band gap
更新于2025-09-23 15:21:21
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: A first-principles study
摘要： For environmental reasons there is a need for alternative Cd-free buffer materials in Cu(In,Ga)(S,Se)2 (CIGSSe) based thin film solar cells. In this context, β-In2S3 is one candidate material, whose optoelectronic properties can be affected by the presence of impurities. In this study, we investigate the impact of O and Cl impurities on the electronic and optical behavior of β-In2S3 by means of electronic structure calculations within density functional theory using hybrid functionals. We find that β-In2S3 is thermodynamically stable being in contact with both O and Cl reservoirs. Furthermore, we present evidence that O on interstitial sites (Oi) and Cl on 8c In sites (ClIn) cause low-temperature persistent electron photoconductivity. At room temperature, defect levels associated with Cl on S sites (ClS, ClS(cid:2) , and ClS(cid:2)(cid:2) ) get thermally ionized and release free electrons into the system. Thus, the n-type conductivity of the In2S3 buffer layer increases. O impurities on S sites, in contrast, are electrically inert. Hence, we conclude that intentional doping by Cl is a means to improve the properties of β-In2S3 serving as buffer material.
关键词： β-In2S3,hybrid functionals,O and Cl impurities,n-type conductivity,density functional theory,persistent electron photoconductivity,electronic structure calculations
更新于2025-09-23 15:21:21
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Highly efficient photoelectrochemical water oxidation enabled by enhanced interfacial interaction in 2D/1D In2S3@Bi2S3 heterostructures
摘要： Van der Waals (vdW) heterostructures have received tremendous attention in low dimensional semiconductors due to interfacial surface reconstruction and electronic coupling effects. Here, we report mixed-dimensional 2D/1D In2S3@Bi2S3 heterostructures synthesized via two-step solvothermal in-situ growth. Theoretical calculations demonstrate In2S3 nanosheets and Bi2S3 nanorods are integrated together through the vdW interaction. Through theoretical calculations and experiment, the results confirm the surface potential of Bi2S3 is higher than In2S3, implying the free electrons will flow from Bi2S3 to In2S3 when the two semiconductors contact, leading to electron’s and hole’s accumulation at In2S3 and Bi2S3 surface. This redistribution of charges will induce an outward vector of built-in electric field at the In2S3@Bi2S3 interface (from Bi2S3 to In2S3), thereby improving hole’s transfer to In2S3 and electron’s transfer to Bi2S3. The advanced heterostructure aids in shortening the photogenerated electrons’ transport time (14 μs), promoting the electron-hole’s separation, and presents 13.3-fold enhancement in photocurrent density when compared to In2S3.
关键词： water oxidation,photoelectrochemical,interface interaction,In2S3@Bi2S3,heterostructure
更新于2025-09-23 15:19:57
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Asymmetric Contact Induced Self-Powered 2D In2S3 Photodetector towards High-Sensitivity and Fast-Response
摘要： Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieve self-powered operation by adopting geometrical asymmetry in the device architecture, where a triangular non-layered 2D In2S3 flake with asymmetric contact is combined with traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA/W), high detectivity (1.56 × 1010 Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In2S3/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In2S3/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.
关键词： high sensitivity,fast response,asymmetric contact,Self-powered photodetectors,2D In2S3,photogating effect
更新于2025-09-19 17:13:59
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Efficiency improvement of flexible Sb2Se3 solar cells with non-toxic buffer layer via interface engineering
摘要： Thin film Sb2Se3 solar cells have gained a worldwide attention as a highly potential Earth-abundant photovoltaic technology. While Sb2Se3 solar cells are typically fabricated in superstrate structure, substrate configuration devices offer versatility in substrate material choice particularly important for flexible devices. However, all substrate type Sb2Se3 solar cells use CdS as a buffer layer synthesized by chemical bath deposition method, during which Sb2Se3 surface is degraded limiting solar cell performance. Additionally, contamination layer has been reported to exist on Sb2Se3 surface after deposition under low vacuum conditions. In this study, we demonstrate a facile strategy to improve Sb2Se3 solar cell power conversion efficiency (PCE) by replacing CdS with In2S3 and applying a two-step treatment involving chemical etching and subsequent annealing. We show that a combined treatment which first removes the contamination layer and then passivates interface defects improves PCE more than three-fold, from 1.6% to 5.35%. Effective passivation of interface defects is ascribed to the formation of thin crystalline Sb2O3 layer on Sb2Se3 absorber surface after the treatment. In conclusion, optimized two-step treatment offers a simple and effective way to improve PCE and replacement of toxic CdS with In2S3 demonstrates new device design options towards flexible and non-toxic Sb2Se3 solar cells.
关键词： dangling bonds,thin films,flexible solar cells,Sb2Se3,In2S3
更新于2025-09-19 17:13:59
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Strain Engineering Coupled with Optical Regulation towards High-sensitivity In2S3 Photodetector
摘要： Non-layered 2D materials possess intriguing properties, widening the scope of 2D libraries and promising considerable potential for applications in next-generation optoelectronics. However, due to the surface dangling bonds and weak light adsorption arising from atomically thin thickness, their photosensitivity is still limited. Herein, we achieve an ultrasensitive 2D In2S3 photodetector by adopting strain engineering coupled with optical regulation. A SiO2 nanograting array was introduced to construct strained morphology of 2D In2S3. This morphology induces charge localization and renders back-to-back built-in electric field array, which efficiently suppresses the dark current and separates the photo-excited carriers. Simultaneously, the SiO2 nanograting array realizes light management and improves the light harvesting. As a result, the device presents an ultralow dark current of 3.2 pA with a high signal-to-noise ratio up to 1.7 × 106. Especially, a prominent photoresponsivity of 1810 A/W, an excellent detectivity of 2.09 × 1015 Jones and a fast response speed of 0.41 ms are achieved. This work depicts an effective scheme to associate photonic/electronic properties manipulation for optoelectronic applications.
关键词： strain engineering,SiO2 nanograting,In2S3,optical regulation,photodetector,2D materials
更新于2025-09-19 17:13:59
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Solar cell performance enhancement with optimized CIGS absorber bandgap and buffer layer
摘要： In the past years, record efficiency of copper-indium-gallium-diselenide (CIGS) based solar cells has improved reaching 22.6%. This result shows that CIGS absorbent is idealistic for thin-film solar cells. The most attractive feature in CIGS is the tunable bandgap of the absorber layer that varies from 1.06 eV to 1.7 eV depending on the gallium fraction. This feature leads to best match the solar spectrum. In the present work, the influence of the bandgap of the absorber is investigated using solar cell capacitance simulator (SCAPS). An optimum bandgap of 1.39 eV results in a maximum efficiency of 24.288%. In order to get a Cd-free CIGS based thin film solar cell the CdS buffer layer is replaced by In2S3. The results show that In2S3 is a proper alternative that does not degrade the cell performance.
关键词： Cd-free,CIGS,solar cell,bandgap,In2S3,SCAPS
更新于2025-09-16 10:30:52