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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
175 条数据
?? 中文（中国） ▾

  • Damp-Heat-Stable, High-Efficiency, Industrial-Size Silicon Heterojunction Solar Cells

    摘要： Silicon heterojunction (SHJ) solar cells hold the power conversion efficiency (PCE) record among crystalline solar cells. However, amorphous silicon is a typical high-entropy metastable material. Damp-heat aging experiments unveil that the amorphous/crystalline silicon interface is susceptible to moisture, which is potentially the biggest stumbling block for mass production. By capping SiNx and SiOx dielectrics, the absolute PCE degradation is predicted to be only (cid:1)0.6% after a 30-year installation. This demonstrates the SHJ solar cell is a highly promising candidate for next-generation photovoltaics.

    关键词： High efficiency,Amorphous silicon,Mass production,Damp-heat stability,Silicon heterojunction solar cells

    更新于2025-09-23 15:21:01

  • Si-doping effect on solution-processed In-O thin-film transistors

    摘要： In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3-SiO2 binary oxide structure up to 15 at.%, the thicknesses, densities, and crystallinity of the resulting In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 V and low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at.% annealed at 400 °C demonstrated the smallest subthreshold swing of 0.5 V/dec, VT of ?5 V, mobility of 0.21 cm2/Vs, and on/off current ratio of about 2×107.

    关键词： silicon-doped indium oxide,solution processing,amorphous oxide semiconductor,thin-film transistor,spin coating

    更新于2025-09-23 15:21:01

  • Amorphous Silicon with Extremely Low Absorption: Beating Thermal Noise in Gravitational Astronomy

    摘要： Amorphous silicon has ideal properties for many applications in fundamental research and industry. However, the optical absorption is often unacceptably high, particularly for gravitational-wave detection. We report a novel ion-beam deposition method for fabricating amorphous silicon with unprecedentedly low unpaired electron-spin density and optical absorption, the spin limit on absorption being surpassed for the first time. At low unpaired electron density, the absorption is no longer correlated with electron spins, but with the electronic mobility gap. Compared to standard ion-beam deposition, the absorption at 1550 nm is lower by a factor of ≈100. This breakthrough shows that amorphous silicon could be exploited as an extreme performance optical coating in near-infrared applications, and it represents an important proof of concept for future gravitational-wave detectors.

    关键词： amorphous silicon,thermal noise,gravitational-wave detection,ion-beam deposition,optical absorption

    更新于2025-09-23 15:21:01

  • The Phase Behavior in the Active Layer of Small Molecule Organic Photovoltaics: The State Diagram of p-DTS(FBTTh <sub/>2</sub> ) <sub/>2</sub> :PC <sub/>71</sub> BM

    摘要： A comprehensive study was undertaken to obtain a more fundamental understanding of the phase behavior of the p-DTS(FBTTh2)2:PC71BM system, used in small molecule organic solar cells, with a strong focus on the amorphous phase and its influence on crystallinity. Three dedicated thermal protocols were used in combination with advanced thermal analysis, solid-state NMR, and wide angle X-ray diffraction. Rapid cooling, to avoid structure formation and gain insight in the amorphous phase, and slow cooling, to promote structure formation, were used as limiting cases to explain the intermediate behavior after device processing from solution. A complete state diagram was developed and the glass transition (Tg) - composition relationship was determined. In the case of slow cooling and the procedure used for device processing, the rapid crystallization of p-DTS(FBTTh2)2 leads to an enrichment of the amorphous phase in PC71BM, increasing its Tg and causing vitrification of the mixed amorphous phase before crystallization when the total amount of PC71BM exceeds 70 wt%. The common processing additive 1,8-diiodooctane (DIO) was found to lead to a lower p-DTS(FBTTh2)2 crystallinity and smaller average crystal size. More importantly, it acts as a strong plasticizer, lowering Tg significantly and thus reducing the morphological stability of the p-DTS(FBTTh2)2:PC71BM mixtures.

    关键词： p-DTS(FBTTh2)2:PC71BM,glass transition temperature,wide angle X-ray diffraction,phase behavior,crystallinity,amorphous phase,small molecule organic photovoltaics,thermal analysis,solid-state NMR,1,8-diiodooctane (DIO)

    更新于2025-09-23 15:19:57

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Angular Dependence of Textured Bifacial Silicon Heterojunction Solar Cells for High Latitudes

    摘要： Bifacial photovoltaics at high latitudes can achieve up to 25-45% bifacial gain due to high-albedo snow cover and high proportion of diffuse light. We studied the angular performance of bifacial silicon heterojunction solar cells with various textures to understand high-latitude effects on optical losses. For cone and pyramid-patterned designs, efficiency decreases at high angles, primarily due to increased reflectivity, although longer path length through front-surface films also increases UV losses for all surface types. At 80° incidence and 25°C, a <7% reduction in short-circuit current due to change in external quantum efficiency is observed for random pyramid textured surfaces. Simulation is compared to measured external quantum efficiency for a silicon heterojunction cell, and similar trends are observed with increasing angle of incidence. A relative reduction of <1% in short-circuit current is also observed when moving from an air mass of 1.5 to 5 at high angles of incidence. These results will inform future solar heterojunction designs for this application and be applied to refine annual energy yield calculations.

    关键词： photovoltaic cells,bifacial photovoltaics,indium-tin-oxide,amorphous silicon,ray tracing,silicon solar cell,texture,angle of incidence,heterojunction cell,air mass

    更新于2025-09-23 15:19:57

  • [IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Performance of silicon heterojunction solar cells using high resistivity substrates

    摘要： We investigate the potential advantages of using very high resistivity n- and p-type, to manufacture high performance solar cells. Analytical modeling indicates that high resistivity substrates (10 Ωcm - >1k Ωcm) are required to have bulk Shockley-Read-Hall lifetimes in the millisecond range to outperform wafers with standard resistivities (< 10 Ωcm). Additionally, for resistivities over 10 Ω.cm, efficiencies show to be weakly dependent of the bulk resistivity. These results if experimental verified, can lead to more affordable manufacturing, by lessening the requirements of dopants homogeneity along the ingot. We successfully passivated both n- and p- type substrates using i-a-Si:H, obtaining surface saturation current densities below 10 fAcm-2 and effective minority-carrier lifetimes over 2 ms at maximum power over the entire range of bulk resistivities (3 Ωcm- >10k Ωcm).

    关键词： photovoltaic cells,doping,charge carrier lifetime,silicon,amorphous materials

    更新于2025-09-23 15:19:57

  • Analysing consequence of solar irradiance on amorphous silicon solar cell in variable underwater environments

    摘要： Harvesting underwater Solar energy using photovoltaic (PV) technology leads to an innovative approach to utilize it in monitoring various underwater sensors, devices, or other autonomous systems using modern-day power electronics. Another huge advantage of placing PV cells underwater comes from the fact that the water itself can provide cooling and cleaning for the cells. Such advantages come with many challenges and constraints due to the underwater spectral change and decrease in Solar radiation with an increase in water depth. In this work, an experimental set-up has been realized to create an underwater environment and further characterized in the indoor environment using the Solar simulator. Moreover, the transfer of Solar radiation through water and the performance of amorphous silicon Solar cell underwater up to 0.2 m has been analysed in changing underwater environments. This investigation shows a better understanding of solar radiation underwater and the amorphous silicon solar cell underwater at shallow depths with considering the water depth up to 0.2 m, salinity 3.5%, total dissolved salts, and other impurities affecting the solar radiation and the performance of amorphous silicon Solar cell in underwater conditions. In addition to that, the maximum power output Pmax of amorphous silicon Solar cell is 0.0367 W at 0.2 m in the case of DI water. In contrast, in real seawater and artificial seawater with 3.5% salinity, it shows 0.0337 W and 0.0327 W, respectively.

    关键词： water salinity,amorphous silicon Solar cell,photovoltaic (PV) technology,underwater Solar energy,Solar radiation,PDMS (polydimethylsiloxane)

    更新于2025-09-23 15:19:57

  • Highly Efficient Photo-Induced Charge Separation enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors

    摘要： Quantum dot (QD)-based optoelectronics have received a large amount of interest for the versatile applications due to their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, the QD-based hybrid devices which are combined with various high-mobility semiconductors have been actively researched to enhance the optoelectronic characteristics as well as maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors, and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultra-high detective phototransistors with highly efficient photo-induced charge separation using Sn2S6 4--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analysis. In particular, the photocurrent imaging microscopy revealed that interface engineering in QD-AOS with chelating chalcometallate ligands cause efficient charge transfer, resulting in photovoltaic-dominated responses over whole channel area. On the other hands, monodentate ligands incorporated QD-AOS based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.

    关键词： quantum dots,scanning photocurrent microscopy,phototransistor,chalcometallate ligands,amorphous IGZO,ligand exchange

    更新于2025-09-23 15:19:57

  • Switchable Photocurrent Generation in an Ultra-thin Resonant Cavity Solar Cell

    摘要： Fabry-Perot type resonant nanocavities allow for broadband enhancement of light absorption in ultra-thin absorber layers. By introducing a switchable mirror, these thin film structures can be used as unique optical devices enabling interesting applications with switchable absorption. We use a thin film photovoltaic layer stack based on an amorphous germanium absorber layer and combine it with a thin Mg/Pd mirror to create a switchable solar cell. In this work we demonstrate, how we can switch the light absorption and hence the photocurrent generation of the thin film solar cell by changing the refractive index of Mg, due to hydrogen absorption. Our results show, how optical resonances in the absorber can be switched “on / off” by the change of optical properties of the magnesium reflector. The multi-layer system can be switched from a light absorbing and photocurrent generating state to a transparent window state with excellent color neutrality. We emphasize our study as an important step towards the realization of switchable photovoltaic windows, which paves the way for larger scale building integrated photovoltaic applications.

    关键词： Ultra-thin absorber,light trapping,photovoltaic,amorphous germanium,switchable magnesium mirror,smart window

    更新于2025-09-23 15:19:57

  • Glass formation in amorphous ZnO films revealed by chip calorimetry

    摘要： In this work, we utilize the high heating/cooling rates of chip calorimetry to perform in situ annealing of an inkjet-printed zinc oxide solgel ink consisting of zinc acetate, 2-methoxyethanol, and monoethanolamine and directly observe the thermodynamic signatures of its corresponding structural phase transformations. We find that rapid solvent removal achieved by annealing above the boiling point of the solvent, similar to an industrial drying technique known as flash drying, induces the formation of (cid:1) 98% amorphous zinc oxide films having an unprecedented, largely pronounced glass transition while retaining its semiconductor properties evidenced by field-effect transistor measurements. Thin-films produced at comparable heating rates to those used for calorimetry experiments are used to corroborate these findings using independent measurements. Prepared films exhibit a clear amorphous halo centered about the three most prominent Bragg positions of the wurtzite phase of ZnO and remain thermally stable against crystallization until 250 (cid:3)C have a room temperature thermal conductivity of (cid:1) 1:03–1:4 W m(cid:4)1 K(cid:4)1 (consistent with recent ab initio estimates) with supporting evidence of a structural relaxation near TG consistently observed in both electronic and thermal conductivity.

    关键词： semiconductor properties,amorphous ZnO films,glass formation,chip calorimetry,flash drying

    更新于2025-09-23 15:19:57