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Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films
摘要： Nanostructured vanadium pentoxide (V2O5) thin films have been deposited by a simple and cost-effective spray pyrolysis technique (SPT) at substrate temperature 300 °C and post annealed at atmospheric conditions in the temperature range from 300 °C to 500 °C at a constant rate of heating. The influence of post annealing heat treatment on the crystallization of V2O5 has been investigated. Films were characterized structurally by X-ray diffraction, morphologically by Scanning electron microscopy, optically using UV-Vis spectrophotometer, electrical characterization using Hall probe and Raman spectroscopy has been carried out for phase confirmation. X-ray diffraction analysis (XRD) revealed that, as deposited films were orthorhombic structures with a preferential orientation along (0 0 1) direction. Moreover, it was observed that crystallite size increases from 22 nm to 56 nm with increase in annealing temperature. Optical properties of these samples were studied in the wavelength range 300 – 1000 nm. Raman spectrum confirms the layered structure of V2O5 thin films. Hall Effect measurements indicate that the change in carrier concentration with increase in annealing temperature.
关键词： Raman spectroscopy,carrier density,annealing temperature,V2O5
更新于2025-11-21 11:18:25
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Reactive Mechanism of Cu2ZnSnSe4 Thin Films Prepared by Reactive Annealing of the Cu/Zn Metal Layer in a SnSex + Se Atmosphere
摘要： Cu2ZnSnSe4 (CZTSe) thin films were prepared by a two-step process with the electrodeposition of a Cu/Zn metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. We investigate the effect of the Sex and SnSex (x = 1,2) partial pressures and annealing temperature on the morphological, structural, and elemental distribution of the CZTSe thin films. Line scanning energy dispersive spectroscopy (EDS) measurements show the presence of a Zn-rich secondary phase at the back-absorber region of the CZTSe thin films processed with higher SnSex partial pressure and lower annealing temperatures. The Zn-rich phase can be reduced by lowering the SnSex partial pressure and by increasing the annealing temperature. A very thin MoSe2 film between the CZTSe and Mo interface is confirmed by X-ray diffraction (XRD) and grazing incidence X-ray diffraction (GIXRD) measurements. These measurements indicate a strong dependence of these process variations in secondary phase formation and accumulation. A possible reaction mechanism of CZTSe thin films was presented. In a preliminary optimization of both the SnSex partial pressure and the reactive annealing process, a solar cell with 7.26% efficiency has been fabricated.
关键词： Sex and SnSex (x = 1,2) partial pressures,annealing temperature,metallic stack precursor,Cu2ZnSnSe4 (CZTSe),electrodeposition
更新于2025-11-14 15:15:56
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Effect of post-annealing on microstructure and piezoelectric properties of ZnO thin film for triangular shaped vibration energy harvester
摘要： In this paper, a triangular shaped piezoelectric vibration energy harvester (TS-PVEH) with zinc oxide (ZnO) thin films as the piezoelectric layer is reported. The effect of post-annealing temperature on the microstructure and piezoelectric performance of ZnO thin film deposited by magnetron sputtering method is investigated firstly. The results show that the optimum post-annealing temperature of 150 °C was the most beneficial to improve the piezoelectric properties of ZnO thin films. Four prototypes of TS-PVEH with different structure parameters are fabricated and optimized. The simulation and experiment results indicate that the height and width of the triangular structure have a significant influence on the vibration mode and the output performance of TS-PVEHs. The optimization results indicate that the third prototype has the best output performance. Its open-circuit voltage and short-circuit current are 290mV and 1.25 μA, respectively, when the vibration acceleration is 5m/s2 and the frequency is 56Hz. Moreover, it has the highest load power density of 0.035μW/cm2 when the load is 0.1MΩ.
关键词： Triangular substrate,ZnO thin film,Structure optimization,Post-annealing temperature,Vibration energy harvester
更新于2025-09-23 15:23:52
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Structural and thermoelectric properties of copper sulphide powders
摘要： Over the past few years, Cu-based materials have been intensively studied focusing on their structural and thermoelectric properties. In this work, copper sulphide powders were synthesized by the sol-gel method. The chemical composition and the morphological properties of the obtained samples were analyzed by X-ray diffraction, differential thermal analysis, and scanning electron microscopy. It is shown that the decomposition from one phase to another can be obtained by annealing. The electrical resistivity and the crystallite size were found to be strongly affected by the phase transition. Thermoelectric analyses showed that the digenite phase exhibits the highest power factor at room temperature. The Seebeck coefficient of the compound Cu1.8S shows a pronounced peak at the γ–β transition temperature. This behavior was statistically explained in terms of a dramatic increase in the disorder in the atoms-carriers ensemble.
关键词： thermoelectricity,copper sulphide,annealing temperature,phase transition
更新于2025-09-23 15:22:29
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The effects of thermal annealing on the structural and electrical properties of Zinc Tin oxide thin films for transparent conducting electrode applications
摘要： The as-deposited and annealed Zinc tin oxide (Zn2SnO4) thin films were deposited by electron beam evaporation technique and were characterized for the structural, optical and electrical properties. The x-ray diffraction technique revealed the amorphous nature of as-deposited thin film while the films annealed at 400, 500 and 6000C in air were found to be polycrystalline. The phase change from amorphous to crystalline Zn2SnO4 results in the higher resistance as revealed by resistance versus temperature measurements. From the Hall Effect, the as deposited film shows the electron mobility and carrier concentrations (electron) equal to 33cm2/V.s and 8.361x 1017cm-3 respectively. The agglomeration of grains in annealed thin films are observed by Atomic Force Microscopy (AFM) technique.The peaks in Optical transmission spectra, observed by using the UV-Vis spectroscopy confirm the creation of sub levels between conduction band minimum and valence band maximum after annealing. The band gaps calculated by Tauc plot explore the possibility of shifting the Fermi level towards valence band maximum after thermal annealing.
关键词： Annealing temperature,Zn2SnO4,Band gap,Oxygen vacancies,Electron beam evaporation,TCOs
更新于2025-09-23 15:22:29
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Effects of annealing temperature on photovoltaic properties of lead-free (CH<sub>3</sub>NH<sub>3</sub>)<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> solar cells
摘要： Effects of annealing temperature on photovoltaic properties of lead-free (CH3NH3)3Bi2I9 solar cells were investigated. The (CH3NH3)3Bi2I9 photovoltaic cells were fabricated by a hot air blow-assisted spin-coating method. The spin-coated (CH3NH3)3Bi2I9 photoactive layers were annealed at temperatures of 100–150 °C. Current density–voltage characteristics of the (CH3NH3)3Bi2I9 photovoltaic cells showed that conversion efficiency increased with increasing annealing temperature. Microstructures and optical properties of the (CH3NH3)3Bi2I9 photoactive layers were also investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and ultraviolet–visible–near infrared spectroscopy. The investigation revealed that the changes in lattice constants, crystallite size, surface morphology, and iodide/bismuth ratio of the (CH3NH3)3Bi2I9 were attributed to the annealing temperature, resulting in the changes in the photovoltaic properties of the (CH3NH3)3Bi2I9 solar cells.
关键词： Solar cells,(CH3NH3)3Bi2I9,Annealing temperature,Photovoltaic properties
更新于2025-09-23 15:21:01
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Performance of dye-sensitized solar cell (DSSC) using carbon black-TiO2 composite as counter electrode subjected to different annealing temperatures
摘要： Carbon black-TiO2 composite counter electrode was synthesized via solid state method and subsequently annealed at different annealing temperatures (450–550 °C). The composite was investigated as a counter electrode, acting as an alternative to platinum in a dye-sensitized solar cell. The aim is to obtain a higher conversion efficiency of solar energy being converted into electricity. The synthesized sample was structurally characterized by X-ray diffraction and it was found that annealing temperature strongly enhanced the anatase structure of carbon black-TiO2. The surface morphology and grain size were examined by field emission scanning electron microscopy which showed the presence of mesoporous structure; this is very important for high quality dye and electrolyte distribution. Electrochemical studies of carbon black-TiO2 counter electrodes suggest that increasing the annealing temperature may lead to increased charge transfer resistance which could contribute to decreased catalytic activity. The photovoltaic properties of carbon black-TiO2 were observed to be strongly influenced by the annealing temperature; measurements taken at annealing temperature of 525 °C showed the best photovoltaic properties of JSC = 6.10 mA/cm2, VOC = 0.51 V, FF = 0.89 and η = 2.77%.
关键词： Carbon black-TiO2 composite,Solid state method,Counter electrode,Annealing temperature
更新于2025-09-23 15:21:01
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Correlation between efficiency and device characterization in MAPbI3-xClx standard perovskite solar cells
摘要： Hybrid organic–inorganic halide perovskite solar cells (PSCs) have gained exceptional attention in photovoltaic fields with an attractive yield of 25%. Characterization tools present as an important means that would help define optimized treatment parameters at an early stage of device manufacturing, instead of measuring the J (V) curves of complete solar cells. In this work, devices with planar NIP architecture ITO/SnO2/MAPbI3-xClx/HTL/Au were elaborated using one-step deposition method. The effects of annealing temperature of the ETL layer (SnO2) and various materials as an HTL layer have been studied. In parallel, X-ray diffraction, UV–visible absorption and photoluminescence were performed as well as photoluminescence spectroscopy, to analyze the active layer crystallinity, absorption properties and to probe charge transfer between perovskite and interface layers. By varying processing parameters, device efficiency could be raised from 10% up to 13.2%.
关键词： SnO2,HTL materials,Perovskite solar cells,Annealing temperature,MAPbI3-xClx,Photovoltaic performance
更新于2025-09-23 15:21:01
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Controllable Multia??Step Preparation Method for Higha??Efficiency Perovskite Solar Cells with Low Annealing Temperature in Glove Box
摘要： Through a low-temperature process, a controlled two-step method in glove box is achieved, which avoids the need to transfer from glove box to air for annealing with the aid of moisture to assist crystallization in the traditional two-step method. Further utilizing recoating FA0.9MA0.1I solution to improve the formed perovskite, a high-efficiency perovskite solar cell is finally prepared through solid-liquid reaction.
关键词： low annealing temperature,perovskite solar cells,multi-step method,annealing-free
更新于2025-09-23 15:19:57
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Enhancement of power conversion efficiency of Al/ZnO/p-Si/Al heterojunction solar cell by modifying morphology of ZnO nanostructure
摘要： This paper proposes a cost-effective sol–gel method for synthesis of ZnO nanostructure to make Al/ZnO/p-Si/Al heterojunction solar cell. Here, crystalline ZnO nanostructure was grown on p-silicon and annealed at 300 °C, 400 °C and 500 °C for application in heterojunction solar cell. The optimum temperature for obtaining uniform crystalline nanostructure was 500 °C, as confirmed from XRD and SEM imaging. As investigated by UV–Vis spectroscopy, the ZnO nanostructure layer exhibited high transmittance in the visible spectrum and has a direct band gap of 3.26–3.28 eV. The power conversion efficiency of Al/ZnO/p-Si/Al solar cell is enhanced from 1.06 to 2.22% due to increase in surface area of ZnO by formation of crystalline nanostructure due to increase of annealing temperature. The optimum value of short-circuit current (Isc) and open-circuit voltage (Voc) was measured using current–voltage (I–V) under AM 1.5 illuminations and found to be 9.97 mA and 460 mV, respectively.
关键词： Power conversion efficiency,Sol–gel method,Annealing temperature,Heterojunction solar cell,ZnO nanostructure
更新于2025-09-23 15:19:57